Silicon Thermal Oxide Wafer

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WeiTai Energy Technology Co., Ltd ndiwotsogola wotsogola wokhazikika pazophatikizika ndi zida zapamwamba za semiconductor.Ndife odzipereka kuti tipereke zinthu zapamwamba, zodalirika, komanso zatsopano pakupanga semiconductor, mafakitale a photovoltaic ndi magawo ena okhudzana nawo.

Zogulitsa zathu zikuphatikiza zinthu za SiC/TaC zokutidwa ndi graphite ndi zinthu za ceramic, kuphatikiza zida zosiyanasiyana monga silicon carbide, silicon nitride, ndi aluminium oxide ndi zina.

Pakali pano, ndife opanga okha kupereka chiyero 99.9999% SiC ❖ kuyanika ndi 99.9% recrystallized pakachitsulo carbide.Kutalika kwa zokutira kwa SiC kwambiri titha kuchita 2640mm.


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Silicon Thermal Oxide Wafer

Thermal oxide wosanjikiza wa silicon wafer ndi oxide wosanjikiza kapena silika wosanjikiza wopangidwa pachopanda pamwamba pa silicon wafer pansi pa kutentha kwambiri ndi oxidizing wothandizira.Thermal oxide wosanjikiza wa silicon wafer nthawi zambiri amakula mu ng'anjo yopingasa, ndipo kukula kwa kutentha kumakhala 900 ° C ~ 1200 ° C, ndipo pali mitundu iwiri ya kukula "yonyowa oxidation" ndi "dry oxidation".Thermal oxide wosanjikiza ndi "wakula" oxide wosanjikiza amene ali apamwamba homogeneity ndi apamwamba dielectric mphamvu kuposa CVD yoyika oxide wosanjikiza.Thermal oxide layer ndi gawo labwino kwambiri la dielectric ngati insulator.Pazida zambiri zopangidwa ndi silicon, wosanjikiza wa oxide wotentha umakhala ndi gawo lofunikira ngati doping blocking layer ndi dielectric yapamtunda.

Malangizo: Mtundu wa okosijeni

1. Dry oxidation

Silicon imakhudzidwa ndi okosijeni, ndipo wosanjikiza wa oxide umayenda kupita ku basal layer.Oxidation youma iyenera kuchitika pa kutentha kwa 850 mpaka 1200 ° C, ndipo kukula kwake kumakhala kochepa, komwe kungagwiritsidwe ntchito pakukula kwa chipata cha MOS.Pakafunika mtundu wapamwamba kwambiri, wowonda kwambiri wa silicon oxide wosanjikiza, makutidwe okosijeni owuma ndi abwino kuposa okosijeni wonyowa.

Dry makutidwe ndi okosijeni mphamvu: 15nm ~ 300nm (150A ~ 3000A)

2. Kunyowa oxidation

Njirayi imagwiritsa ntchito chisakanizo cha haidrojeni ndi okosijeni woyenga kwambiri kuti itenthe pa ~ 1000 ° C, motero imatulutsa nthunzi yamadzi kuti ikhale wosanjikiza wa oxide.Ngakhale makutidwe ndi okosijeni chonyowa sangathe kutulutsa wosanjikiza wapamwamba kwambiri ngati okosijeni wowuma, koma wokwanira kugwiritsidwa ntchito ngati malo odzipatula, poyerekeza ndi oxidation youma ali ndi ubwino woonekeratu kuti ali ndi kukula kwakukulu.

Kuchuluka kwa okosijeni: 50nm~15µm (500A ~15µm)

3. Njira yowuma - njira yonyowa - njira yowuma

Mwanjira iyi, mpweya wabwino wouma umatulutsidwa mu ng'anjo ya okosijeni pa gawo loyamba, hydrogen imawonjezeredwa pakati pa okosijeni, ndipo haidrojeni imasungidwa pamapeto kuti ipitirire kutsekemera ndi okosijeni wangwiro wouma kuti apange mawonekedwe ochuluka kwambiri kuposa oxidation. wamba chonyowa makutidwe ndi okosijeni ndondomeko mu mawonekedwe a madzi nthunzi.

4. TEOS oxidation

zophika za thermal oxide (1) (1)

Njira ya Oxidation
氧化工艺

Kunyowa oxidation kapena Dry oxidation
湿法氧化/干法氧化

Diameter
硅片直径

2" / 3" / 4" / 6" / 8" / 12"
英寸

Makulidwe a Oxide
氧化层厚度

100 Å ~ 15µm
10nm ~ 15µm

Kulekerera
公差范围

+/- 5%

Pamwamba
表面

Single Side Oxidation(SSO) / Double Sides Oxidation(DSO)
单面氧化/双面氧化

Ng'anjo
氧化炉类型

Horizontal chubu ng'anjo
水平管式炉

Gasi
气体类型

Mpweya wa haidrojeni ndi oxygen
氢氧混合气体

Kutentha
氧化温度

900 ℃ ~ 1200 ℃
900 ~ 1200摄氏度

Refractive index
折射率

1.456

Semicera Ntchito Semicera ntchito 2 Makina opangira zida CNN processing, kuyeretsa mankhwala, CVD zokutira Utumiki wathu


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