Kupaka kwa CVD SiC
Silicon carbide (SiC) epitaxy
The epitaxial tray, yomwe imakhala ndi gawo la SiC lokulitsa kagawo ka SiC epitaxial, imayikidwa mu chipinda chochitiramo ndikulumikizana mwachindunji ndi chophikacho.
Gawo lapamwamba la theka la mwezi ndi chonyamulira zida zina za chipinda chochitiramo cha Sic epitaxy zida, pomwe gawo laling'ono la theka la mwezi limalumikizidwa ndi chubu cha quartz, ndikuyambitsa mpweya woyendetsa susceptor base kuti azungulira.iwo ndi kutentha-controllable ndipo anaika mu anachita chipinda popanda kukhudzana mwachindunji ndi mkate.
Ndi epitaxy
Thireyi, yomwe imakhala ndi gawo la Si pokulitsa kagawo ka Si epitaxial, imayikidwa m'chipinda chochitiramo ndikulumikizana mwachindunji ndi mkatewo.
Mphete yotenthetsera ili pamphete yakunja ya thireyi ya Si epitaxial substrate ndipo imagwiritsidwa ntchito pakuwongolera ndi kutentha.Imayikidwa mu chipinda chochitiramo ndipo sichimalumikizana mwachindunji ndi mtanda.
Epitaxial susceptor, yomwe imakhala ndi gawo la Si pokulitsa kagawo kakang'ono ka Si epitaxial, loyikidwa muchipinda chochitiramo ndikulumikizana mwachindunji ndi mkatewo.
Epitaxial barrel ndi zigawo zikuluzikulu zomwe zimagwiritsidwa ntchito m'njira zosiyanasiyana zopangira semiconductor, zomwe zimagwiritsidwa ntchito pazida za MOCVD, zokhala ndi kutentha kwabwino kwambiri, kukana kwa mankhwala ndi kukana kuvala, zoyenera kwambiri kugwiritsidwa ntchito pa kutentha kwakukulu.Imakhudzana ndi zophika.
| 重结晶碳化硅物理特性 Zakuthupi za Recrystallized Silicon Carbide | |
| 性质 / Katundu | 典型数值 / Mtengo Wodziwika |
| 使用温度 / Kutentha kogwirira ntchito (°C) | 1600 ° C (ndi mpweya), 1700 ° C (kuchepetsa chilengedwe) |
| SiC 含量 / SiC zili | 99.96% |
| 自由 Si 含量 / Zaulere za Si | <0.1% |
| 体积密度 / Kuchulukana kwakukulu | 2.60-2.70 g / masentimita3 |
| 气孔率 / Zowoneka porosity | < 16% |
| 抗压强度 / Kuphatikizika mphamvu | > 600 MPa |
| 常温抗弯强度 / Cold kupinda mphamvu | 80-90 MPa (20°C) |
| 高温抗弯强度 Mphamvu yopindika yotentha | 90-100 MPa (1400°C) |
| 热膨胀系数 / Kukula kwa kutentha @1500°C | 4.70 10-6/°C |
| 导热系数 / Thermal conductivity @1200°C | 23 W/m•K |
| 杨氏模量 / Elastic modulus | 240 GPA |
| 抗热震性 / Thermal shock resistance | Zabwino kwambiri |
| 烧结碳化硅物理特性 Zakuthupi za Sintered Silicon Carbide | |
| 性质 / Katundu | 典型数值 / Mtengo Wodziwika |
| 化学成分 / Chemical Composition | SiC>95%, Si<5% |
| 体积密度 / Bulk Density | >3.07g/cm³ |
| 显气孔率 / Zowoneka porosity | <0.1% |
| 常温抗弯强度 / Modulus of rupture at 20℃ | 270 MPa |
| 高温抗弯强度 / Modulus of rupture at 1200℃ | 290 MPa |
| 硬度 / Kulimba pa 20 ℃ | 2400 Kg / mm² |
| 断裂韧性 / Kupweteka kwapakati pa 20% | 3.3 MPa · m1/2 |
| 导热系数 / Thermal Conductivity pa 1200 ℃ | 45 w/m.K |
| 热膨胀系数 / Kukula kwa kutentha pa 20-1200 ℃ | 4.5 1 × 10 -6/℃ |
| 最高工作温度 / Max.working kutentha | 1400 ℃ |
| 热震稳定性 / Thermal shock resistance pa 1200 ℃ | Zabwino |
| CVD SiC 薄膜基本物理性能 Zofunikira zenizeni zamakanema a CVD SiC | |
| 性质 / Katundu | 典型数值 / Mtengo Wodziwika |
| 晶体结构 / Crystal Structure | FCC β gawo polycrystalline, makamaka (111) yolunjika |
| 密度 / Density | 3.21g/cm³ |
| 硬度 / Kuuma 2500 | 维氏硬度 (500g katundu) |
| 晶粒大小 / Grain SiZe | 2 ~ 10μm |
| 纯度 / Chemical Purity | 99.99995% |
| 热容 / Kutentha Mphamvu | 640 jkg-1·K-1 |
| 升华温度 / Sublimation Kutentha | 2700 ℃ |
| 抗弯强度 / Flexural Strength | 415 MPa RT 4-mfundo |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| 导热系数 / Thermal Conductivity | 300Wm-1·K-1 |
| 热膨胀系数 / Thermal Expansion(CTE) | 4.5 × 10-6 K -1 |
Pyrolytic Carbon Coating
Mbali zazikulu
Pamwamba pake ndi wandiweyani komanso wopanda pores.
Kuyeretsedwa kwakukulu, zonyansa zonse <20ppm, mpweya wabwino.
Kutentha kwakukulu kwa kutentha, mphamvu kumawonjezeka ndi kutentha kwa ntchito, kufika pamtengo wapamwamba kwambiri pa 2750 ℃, sublimation pa 3600 ℃.
Low elastic modulus, mkulu matenthedwe madutsidwe, kutsika kwamphamvu kukulitsa coefficient, komanso kukana kwamphamvu kwamatenthedwe.
Good mankhwala bata, kugonjetsedwa ndi asidi, zamchere, mchere, ndi organic reagents, ndipo alibe mphamvu pa zitsulo sungunuka, slag, ndi zina zowononga TV.Sikuti oxidize kwambiri mumlengalenga pansi pa 400 C, ndipo kuchuluka kwa okosijeni kumawonjezeka kwambiri pa 800 ℃.
Popanda kutulutsa mpweya uliwonse pakatentha kwambiri, imatha kukhala ndi vacuum ya 10-7mmHg pafupifupi 1800°C.
Kugwiritsa ntchito mankhwala
Kusungunula crucible kwa evaporation mu semiconductor makampani.
Mkulu mphamvu zamagetsi chubu chipata.
Burashi yomwe imalumikizana ndi chowongolera magetsi.
Graphite monochromator ya X-ray ndi neutron.
Maonekedwe osiyanasiyana a magawo a graphite ndi zokutira machubu a atomiki.
Pyrolytic carbon coating effect pansi pa maikulosikopu ya 500X, yokhala ndi malo osasunthika komanso osindikizidwa.
CVD Tantalum Carbide Coating
Kupaka kwa TaC ndi m'badwo watsopano wa zinthu zosagwirizana ndi kutentha kwambiri, zokhazikika bwino kuposa SiC.Monga zokutira zosagwira dzimbiri, zokutira zotsutsa-oxidation ndi zokutira zosamva, zitha kugwiritsidwa ntchito m'malo opitilira 2000C, omwe amagwiritsidwa ntchito kwambiri muzamlengalenga zotentha kwambiri, gawo lachitatu la semiconductor single crystal kukula minda.
| 碳化钽涂层物理特性物理特性 Zowoneka bwino za zokutira za TaC | |
| 密度/ Density | 14.3 (g/cm3) |
| 比辐射率 /Specific emissivity | 0.3 |
| 热膨胀系数/ Koyefit yowonjezera ya kutentha | 6.3 10/K |
| 努氏硬度 /Kulimba (HK) | 2000 HK |
| 电阻/ Resistance | 1x10-5 Ohm *cm |
| 热稳定性 /Thermal stability | <2500℃ |
| 石墨尺寸变化/Kusintha kwa Graphite | -10 ~ 20um |
| 涂层厚度/Kupaka makulidwe | ≥220um mtengo wamba (35um ± 10um) |
Solid Silicon Carbide (CVD SiC)
Magawo olimba a CVD SILICON CARBIDE amadziwika ngati kusankha koyambirira kwa mphete za RTP/EPI ndi zoyambira ndi zigawo za plasma etch cavity zomwe zimagwira ntchito pamatenthedwe apamwamba ofunikira (> 1500 ° C), zomwe zimafunikira pachiyero ndizokwera kwambiri (> 99.9995%) ndipo magwiridwe ake ndiabwino makamaka pamene ma resistance tol amakhala okwera kwambiri.Zidazi zilibe magawo achiwiri pamphepete mwa tirigu, kotero zigawo zake zimapanga tinthu tating'onoting'ono kusiyana ndi zipangizo zina.Kuphatikiza apo, zigawozi zimatha kutsukidwa pogwiritsa ntchito HF/HCI yotentha popanda kuwonongeka pang'ono, zomwe zimapangitsa kuti tinthu tating'onoting'ono tizikhala ndi moyo wautali wautumiki.
