Thermal oxide wosanjikiza wa silicon wafer ndi oxide wosanjikiza kapena silika wosanjikiza wopangidwa pachopanda pamwamba pa silicon wafer pansi pa kutentha kwambiri ndi oxidizing wothandizira.Thermal oxide wosanjikiza wa silicon wafer nthawi zambiri amakula mu ng'anjo yopingasa, ndipo kukula kwa kutentha kumakhala 900 ° C ~ 1200 ° C, ndipo pali mitundu iwiri ya kukula "yonyowa oxidation" ndi "dry oxidation". Thermal oxide wosanjikiza ndi "wakula" oxide wosanjikiza amene ali apamwamba homogeneity ndi apamwamba dielectric mphamvu kuposa CVD yoyika oxide wosanjikiza. Thermal oxide layer ndi gawo labwino kwambiri la dielectric ngati insulator. Pazida zambiri zopangidwa ndi silicon, wosanjikiza wa oxide wotentha umakhala ndi gawo lofunikira ngati doping blocking layer ndi dielectric yapamtunda.
Malangizo: Mtundu wa okosijeni
1. Dry oxidation
Silicon imakhudzidwa ndi okosijeni, ndipo wosanjikiza wa oxide umayenda kupita ku basal layer. Oxidation youma iyenera kuchitika pa kutentha kwa 850 mpaka 1200 ° C, ndipo kukula kwake kumakhala kochepa, komwe kungagwiritsidwe ntchito pakukula kwa chipata cha MOS. Pakafunika mtundu wapamwamba kwambiri, wowonda kwambiri wa silicon oxide wosanjikiza, makutidwe okosijeni owuma ndi abwino kuposa okosijeni wonyowa.
Dry makutidwe ndi okosijeni mphamvu: 15nm ~ 300nm (150A ~ 3000A)
2. Kunyowa oxidation
Njirayi imagwiritsa ntchito chisakanizo cha haidrojeni ndi okosijeni woyenga kwambiri kuti itenthe pa ~ 1000 ° C, motero imatulutsa nthunzi yamadzi kuti ikhale wosanjikiza wa oxide. Ngakhale makutidwe ndi okosijeni chonyowa sangathe kutulutsa wosanjikiza wapamwamba kwambiri ngati okosijeni wowuma, koma wokwanira kugwiritsidwa ntchito ngati malo odzipatula, poyerekeza ndi oxidation youma ali ndi ubwino woonekeratu kuti ali ndi kukula kwakukulu.
Kuchuluka kwa okosijeni: 50nm~15µm (500A ~15µm)
3. Njira yowuma - njira yonyowa - njira yowuma
Mwanjira iyi, mpweya wabwino wouma umatulutsidwa mu ng'anjo ya okosijeni pa gawo loyamba, hydrogen imawonjezeredwa pakati pa okosijeni, ndipo haidrojeni imasungidwa pamapeto kuti ipitirire kutsekemera ndi okosijeni wangwiro wouma kuti apange mawonekedwe ochuluka kwambiri kuposa oxidation. wamba chonyowa makutidwe ndi okosijeni ndondomeko mu mawonekedwe a madzi nthunzi.
4. TEOS oxidation
| Njira ya Oxidation | Kunyowa oxidation kapena Dry oxidation |
| Diameter | 2" / 3" / 4" / 6" / 8" / 12" |
| Makulidwe a Oxide | 100 Å ~ 15µm |
| Kulekerera | +/- 5% |
| Pamwamba | Single Side Oxidation(SSO) / Double Sides Oxidation(DSO) |
| Ng'anjo | Horizontal chubu ng'anjo |
| Gasi | Hydrogen ndi mpweya wa oxygen |
| Kutentha | 900 ℃ ~ 1200 ℃ |
| Refractive index | 1.456 |
