Silicon Carbide Substrates | SiC Wafers

Kufotokozera Kwachidule:

WeiTai Energy Technology Co., Ltd ndiwotsogola wotsogola wokhazikika pazophatikizika ndi zida zapamwamba za semiconductor.Ndife odzipereka kuti tipereke zinthu zapamwamba, zodalirika, komanso zatsopano pakupanga semiconductor, mafakitale a photovoltaic ndi magawo ena okhudzana nawo.

Zogulitsa zathu zikuphatikiza zinthu za SiC/TaC zokutidwa ndi graphite ndi zinthu za ceramic, kuphatikiza zida zosiyanasiyana monga silicon carbide, silicon nitride, ndi aluminium oxide ndi zina.

Pakali pano, ndife opanga okha kupereka chiyero 99.9999% SiC ❖ kuyanika ndi 99.9% recrystallized pakachitsulo carbide.Kutalika kwa zokutira kwa SiC kwambiri titha kuchita 2640mm.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Silicon carbide (SiC) single crystal chuma ali ndi gulu lalikulu kusiyana m'lifupi (~ Si 3 nthawi), mkulu matenthedwe madutsidwe (~Si 3.3 nthawi kapena GaAs 10 nthawi), mkulu ma elekitironi machulukitsidwe mlingo kusamuka (~Si 2.5 nthawi), mkulu kuwonongeka magetsi munda (~ Si 10 nthawi kapena GaAs 5 nthawi) ndi zina zabwino kwambiri.

Zida za SiC zili ndi ubwino wosasinthika pankhani ya kutentha kwakukulu, kuthamanga kwapamwamba, maulendo apamwamba, zipangizo zamagetsi zamagetsi komanso kugwiritsa ntchito kwambiri zachilengedwe monga zakuthambo, asilikali, mphamvu za nyukiliya, ndi zina zotero, zimapanga zolakwika za zipangizo zamakono zogwiritsira ntchito semiconductor pazochitika. ntchito, ndipo pang'onopang'ono akukhala odziwika bwino a semiconductor amphamvu.

4H-SiC Silicon carbide gawo lapansi specifications

Chinthu项目	Specifications参数
Polytype 晶型	4H -SiC	6H-SiC
Diameter 晶圆直径	2 inchi \|3 inchi \|4 inu \|6 inchi	2 inchi \|3 inchi \|4 inu \|6 inchi
Makulidwe 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
Conductivity 导电类型	N - mtundu / Semi-insulating N型导电片/ 半绝缘片	N - mtundu / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 (Nayitrogeni)V (Vanadium)	N2 (Nayitrogeni) V (Vanadium)
Kuwongolera 晶向	Pa axis <0001> Kuchokera kumtunda <0001> kuchoka ku 4 °	Pa axis <0001> Kuchokera kumtunda <0001> kuchoka ku 4 °
Kukaniza 电阻率	0.015 ~ 0.03 ohm-masentimita (4H-N)	0.02 ~ 0.1 ohm-masentimita (6H-N)
Kachulukidwe ka Micropipe (MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤ 15 μm	≤ 15 μm
Bow / Warp 翘曲度	≤25 μm	≤25 μm
Pamwamba 表面处理	DSP/SSP	DSP/SSP
Gulu 产品等级	Magulu Opanga / Kafukufuku	Magulu Opanga / Kafukufuku
Crystal Stacking Sequence 堆积方式	Mtengo wa ABCB	Mtengo wa ABCABC
Lattice parameter 晶格参数	a=3.076A , c=10.053A	a=3.073A , c=15.117A
Mwachitsanzo/eV(Band-gap) 禁带宽度	3.27 eV	3.02 eV
ε (Dielectric Constant) 介电常数	9.6	9.66
Refraction Index 折射率	n0 =2.719 ne =2.777	n0 =2.707 , ne =2.755

6H-SiC Silicon Carbide gawo la gawo lapansi

Chinthu项目	Specifications参数
Polytype 晶型	6H-SiC
Diameter 晶圆直径	4 inu \|6 inchi
Makulidwe 厚度	350μm ~ 450μm
Conductivity 导电类型	N - mtundu / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 (Nayitrogeni) V (Vanadium)
Kuwongolera 晶向	<0001> kuchoka pa 4°± 0.5°
Kukaniza 电阻率	0.02 ~ 0.1 ohm-masentimita (Mtundu wa 6H-N)
Kachulukidwe ka Micropipe (MPD) 微管密度	≤ 10/cm2
TTV 总厚度变化	≤ 15 μm
Bow / Warp 翘曲度	≤25 μm
Pamwamba 表面处理	Ngati Nkhope: CMP, Epi-Ready C Nkhope: Kuwala Polish
Gulu 产品等级	Gulu la kafukufuku