Semiconductor SiC yokutidwa monocrystalline silicon epitaxial disk

Semiconductor SiC yokutidwa ndi monocrystalline silicon epitaxial disk Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Semicera Energy Technology Co., Ltd ndiwotsogola wotsogola wokhazikika pazakudya zowotcha komanso zida zapamwamba za semiconductor.Ndife odzipereka kupereka zinthu zapamwamba, zodalirika, komanso zatsopano pakupanga semiconductor,mafakitale a photovoltaicndi madera ena okhudzana.

Zogulitsa zathu zikuphatikiza zinthu za SiC/TaC zokutidwa ndi graphite ndi zinthu za ceramic, kuphatikiza zida zosiyanasiyana monga silicon carbide, silicon nitride, ndi aluminium oxide ndi zina.

Monga ogulitsa odalirika, timamvetsetsa kufunikira kwa zinthu zogwiritsidwa ntchito popanga, ndipo tadzipereka kupereka zinthu zomwe zimakwaniritsa miyezo yapamwamba kwambiri kuti tikwaniritse zosowa za makasitomala athu.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Kufotokozera

Kampani yathu imaperekaKupaka kwa SiCntchito ntchito ndi CVD njira padziko graphite, zoumba ndi zipangizo zina, kuti mpweya wapadera munali mpweya ndi pakachitsulo anachita pa kutentha kupeza mkulu chiyero SiC mamolekyu, mamolekyu waikamo pamwamba pa zinthu TACHIMATA, kupangaSIC chitetezo wosanjikiza.

Monocrystalline silicon epitaxial pepala

Main Features

1. Kutentha kwakukulu kwa okosijeni kukana:
kukana kwa okosijeni kumakhalabe kwabwino kwambiri pamene kutentha kumafika pa 1600 C.
2. Chiyero chachikulu: chopangidwa ndi kuyika kwa nthunzi wamankhwala pansi pa kutentha kwambiri kwa chlorination.
3. Kukana kukokoloka kwa nthaka: kuuma kwakukulu, pamwamba, tinthu tating'onoting'ono.
4. Kukana kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.

Zofunika Kwambiri za CVD-SIC Coating

SiC-CVD Properties
Kapangidwe ka Crystal	FCC β gawo
Kuchulukana	g/cm³	3.21
Kuuma	Vickers kuuma	2500
Ukulu wa Mbewu	μm	2-10
Chemical Purity	%	99.99995
Kutentha Mphamvu	J·kg-1 ·K-1	640
Kutentha kwa Sublimation	℃	2700
Felexural Mphamvu	MPa (RT 4-point)	415
Young's Modulus	Gpa (4pt bend, 1300 ℃)	430
Kukula kwa Thermal (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300