GAWO/1
Crucible, chosungira mbewu ndi mphete yowongolera mu SiC ndi AIN single crystal ng'anjo idakulitsidwa ndi njira ya PVT.
Monga momwe tawonetsera pa Chithunzi 2 [1], pamene njira yoyendetsa nthunzi ya thupi (PVT) imagwiritsidwa ntchito pokonzekera SiC, kristalo ya mbewu ili m'dera lotentha kwambiri, zopangira za SiC zili m'madera otentha kwambiri (pamwamba pa 2400).℃), ndipo zopangirazo zimawola kuti zipange SiXCy (makamaka kuphatikiza Si, SiC₂, Si₂C, etc.).Zida za gawo la nthunzi zimatengedwa kuchokera kudera la kutentha kwambiri kupita ku kristalo wambewu kudera lotsika kwambiri, forming phata la mbewu, kukula, ndi kupanga makhiristo amodzi.Zida zotenthetsera zomwe zimagwiritsidwa ntchito pochita izi, monga crucible, mphete yowongolera, chosungira mbewu, ziyenera kugonjetsedwa ndi kutentha kwakukulu ndipo sizidzawononga zipangizo za SiC ndi makristasi a SiC amodzi.Momwemonso, zinthu zotenthetsera pakukula kwa makhiristo amodzi a AlN ziyenera kugonjetsedwa ndi Al vapor, N.₂dzimbiri, ndipo amafunika kukhala ndi kutentha kwakukulu kwa eutectic (ndi AlN) kufupikitsa nthawi yokonzekera kristalo.
Zinapezeka kuti SiC[2-5] ndi AlN[2-3] zokonzedwa ndiTaC yotsekedwagraphite matenthedwe kumunda zipangizo anali zoyera, pafupifupi palibe mpweya (oxygen, nayitrogeni) ndi zonyansa zina, zochepa m'mphepete zolakwika, ang'onoang'ono resistivity m'dera lililonse, ndi kachulukidwe micropore ndi etching dzenje kachulukidwe anachepetsedwa kwambiri (pambuyo KOH etching), ndi khalidwe kristalo. idawongoleredwa kwambiri.Kuphatikiza apo,Tac cruciblekuwonda ndi pafupifupi ziro, maonekedwe si owononga, akhoza zobwezerezedwanso (moyo mpaka 200h), akhoza kusintha zisathe ndi dzuwa kukonzekera limodzi galasi.
CHITH.2. (a) Chithunzi chojambula cha SiC single crystal ingot chokulitsa chipangizo ndi njira ya PVT
(b) PamwambaTaC yotsekedwamabatani a mbewu (kuphatikiza mbewu ya SiC)
(c)Mphete ya graphite yopangidwa ndi TAC
GAWO/2
MOCVD GaN epitaxial layer kukula chotenthetsera
Monga momwe tawonetsera pa Chithunzi 3 (a), kukula kwa MOCVD GaN ndiukadaulo wamakina oyika nthunzi pogwiritsa ntchito mawonekedwe a organometrical decomposition reaction kuti akule mafilimu oonda ndi kukula kwa nthunzi.Kulondola kwa kutentha ndi kufanana muzitsulo kumapangitsa chotenthetsera kukhala chofunikira kwambiri pazida za MOCVD.Kaya gawo lapansi likhoza kutenthedwa mofulumira komanso mofanana kwa nthawi yaitali (pansi kuzizira mobwerezabwereza), kukhazikika pa kutentha kwakukulu (kukana kutentha kwa mpweya) ndi chiyero cha filimuyo chidzakhudza kwambiri khalidwe la filimuyo, kusasinthasintha kwa makulidwe, ndi ntchito ya chip.
Kuti mupititse patsogolo magwiridwe antchito ndi kukonzanso bwino kwa chotenthetsera mu MOCVD GaN kukula dongosolo,TAC-yokutidwachotenthetsera cha graphite chinayambitsidwa bwino.Poyerekeza ndi GaN epitaxial wosanjikiza wokulirapo ndi chotenthetsera wamba (pogwiritsa ntchito zokutira pBN), GaN epitaxial wosanjikiza wokulirapo ndi chotenthetsera cha TaC ali ndi mawonekedwe ofanana a kristalo, makulidwe ofanana, zolakwika zamkati, doping loyipa komanso kuipitsidwa.Komanso, aKupaka kwa TaCali ndi resistivity yochepa komanso mpweya wochepa wa pamwamba, womwe ukhoza kupititsa patsogolo mphamvu ndi kufanana kwa chotenthetsera, potero kuchepetsa kugwiritsa ntchito mphamvu ndi kutaya kutentha.The porosity wa ❖ kuyanika akhoza kusinthidwa ndi kulamulira magawo ndondomeko kupititsa patsogolo cheza makhalidwe chotenthetsera ndi kuwonjezera moyo wake utumiki [5].Ubwino umenewu umapangaTaC yotsekedwama graphite heaters chisankho chabwino kwambiri cha MOCVD GaN kukula kachitidwe.
CHITH.3. (a) Chithunzi chojambula cha chipangizo cha MOCVD cha kukula kwa GaN epitaxial
(b) Chotenthetsera cha graphite chopangidwa ndi TAC chopangidwa ndi MOCVD, osaphatikiza maziko ndi bulaketi (chithunzi chosonyeza maziko ndi bulaketi pakuwotcha)
(c) Chowotcha cha graphite chopangidwa ndi TAC pambuyo pa kukula kwa 17 GaN epitaxial.[6]
GAWO/3
Chovala chotchinga cha epitaxy (chonyamulira chowotcha)
Wonyamula Wafer ndi gawo lofunikira pokonzekera SiC, AlN, GaN ndi zowotcha zamtundu wina wachitatu komanso kukula kwa epitaxial wafer.Zambiri mwazonyamulira zopyapyala zimapangidwa ndi graphite ndipo zokutidwa ndi zokutira za SiC kuti zithetse dzimbiri kuchokera ku mpweya wopangidwa, wokhala ndi kutentha kwa epitaxial kuyambira 1100 mpaka 1600.°C, komanso kukana kwa dzimbiri kwa zokutira zoteteza kumatenga gawo lofunikira m'moyo wa chonyamulira chophatikizira.Zotsatira zikuwonetsa kuti kuchuluka kwa dzimbiri kwa TaC ndikocheperako ka 6 kuposa SiC mu kutentha kwakukulu kwa ammonia.Pakutentha kwa hydrogen, kutentha kwa dzimbiri kumakhala kocheperako kuposa ka 10 kuposa SiC.
Zatsimikiziridwa ndi kuyesa kuti ma tray omwe amaphimbidwa ndi TaC amawonetsa kuyanjana kwabwino munjira ya buluu ya GaN MOCVD ndipo samawonetsa zonyansa.Pambuyo pakusintha pang'ono, ma lead omwe amakula pogwiritsa ntchito zonyamula za TaC amawonetsa magwiridwe antchito ofanana ndi onyamula wamba a SiC.Chifukwa chake, moyo wautumiki wa ma pallets okutidwa ndi TAC ndiwabwino kuposa inki yopanda miyala ndi inkiSiC yokutidwamapepala a graphite.
Nthawi yotumiza: Mar-05-2024