Gallium Nitride Substrates|GaN Wafers

Kufotokozera Kwachidule:

Gallium nitride (GaN), monga silicon carbide (SiC) zipangizo, ndi wa m'badwo wachitatu wa zipangizo semiconductor ndi lonse band kusiyana m'lifupi, ndi lalikulu bandi kusiyana m'lifupi, mkulu matenthedwe madutsidwe, mkulu ma elekitironi machulukitsidwe mlingo kusamuka, ndi mkulu kusweka magetsi malo abwino kwambiri. makhalidwe.Zipangizo za GaN zili ndi mwayi wochuluka wogwiritsa ntchito maulendo apamwamba, kuthamanga kwambiri komanso madera omwe amafunidwa kwambiri ndi magetsi monga magetsi opulumutsa mphamvu a LED, mawonetsedwe a laser projection, magalimoto atsopano amphamvu, gridi yanzeru, 5G kulankhulana.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Zida za semiconductor za m'badwo wachitatu makamaka zikuphatikizapo SiC, GaN, diamondi, ndi zina zotero, chifukwa kusiyana kwake kwa gulu (Mwachitsanzo) ndi kwakukulu kuposa kapena kofanana ndi ma volts 2.3 amagetsi (eV), omwe amadziwikanso kuti zipangizo zamakono zopangira magetsi. Poyerekeza ndi zida za semiconductor za m'badwo wachitatu ndi wachiwiri, zida za semiconductor za m'badwo wachitatu zili ndi zabwino zaukadaulo wapamwamba wamatenthedwe, malo amagetsi osweka kwambiri, kuchuluka kwakusamuka kwa ma elekitironi apamwamba komanso mphamvu zomangirira, zomwe zimatha kukwaniritsa zofunikira zatsopano zamaukadaulo amakono amagetsi apamwamba. kutentha, mphamvu, kuthamanga, kuthamanga kwafupipafupi komanso kukana kwa radiation ndi zinthu zina zovuta. Ili ndi mwayi wofunikira wogwiritsa ntchito chitetezo cha dziko, ndege, ndege, kufufuza mafuta, kusungirako kuwala, ndi zina zotero, ndipo imatha kuchepetsa kutaya mphamvu ndi 50% m'mafakitale ambiri monga mauthenga a Broadband, mphamvu ya dzuwa, kupanga magalimoto, kuyatsa kwa semiconductor, ndi gridi yanzeru, ndipo kumatha kuchepetsa kuchuluka kwa zida ndi 75%, zomwe ndizofunikira kwambiri pakukula kwa sayansi ndiukadaulo wa anthu.

Chinthu 项目	GaN-FS-CU-C50	GaN-FS-CN-C50	GaN-FS-C-SI-C50
Diameter 晶圆直径	50.8 ± 1 mm
Makulidwe厚度	350 ± 25 μm
Kuwongolera 晶向	C ndege (0001) kuchoka kumbali yopita ku M-axis 0.35 ± 0.15°
Prime Flat 主定位边	(1-100) 0 ± 0.5°, 16 ± 1 mm
Sekondale Flat 次定位边	(11-20) 0 ± 3°, 8 ± 1 mm
Conductivity 导电性	N-mtundu	N-mtundu	Semi-Insulating
Kukaniza (300K) 电阻率	<0.1 Ω·cm	<0.05 Ω·cm	> 106 Ω·cm
TTV 平整度	≤ 15 μm
BOW 弯曲度	≤ 20 μm
Ga Face Surface Kuyipa Ga面粗糙度	<0.2 nm (yopukutidwa);
	kapena <0.3 nm (mankhwala opukutidwa ndi apamwamba a epitaxy)
N Nkhope Ya Pamaso N面粗糙度	0.5 ~ 1.5 μm
	kusankha: 1 ~ 3 nm (nthaka yabwino); <0.2 nm (yopukutidwa)
Dislocation Density 位错密度	Kuchokera 1 x 105 mpaka 3 x 106 cm-2 (yowerengeredwa ndi CL)*
Macro Defect Density 缺陷密度	<2cm-2
Malo Ogwiritsidwa Ntchito 有效面积	> 90% (kupatulapo m'mphepete ndi zovuta zazikulu)
Ikhoza kusinthidwa malinga ndi zofuna za makasitomala, mawonekedwe osiyanasiyana a silicon, safiro, SiC yochokera ku GaN epitaxial sheet.