Magawo a GaAs amagawidwa kukhala conductive ndi semi-insulating, omwe amagwiritsidwa ntchito kwambiri mu laser (LD), semiconductor light-emitting diode (LED), pafupi-infrared laser, quantum bwino high-power laser ndi ma solar amphamvu kwambiri. HEMT ndi HBT tchipisi cha radar, microwave, ma millimeter wave kapena makompyuta othamanga kwambiri komanso kulumikizana kwa kuwala; Zipangizo zamawayilesi zolumikizirana opanda zingwe, 4G, 5G, kulumikizana kwa satellite, WLAN.
Posachedwapa, magawo a gallium arsenide apita patsogolo kwambiri mu mini-LED, Micro-LED, ndi LED yofiira, ndipo amagwiritsidwa ntchito kwambiri pazida zovala za AR/VR.
| Diameter | 50 mm | 75 mm | 100mm | 150 mm |
| Njira Yakukula | LEC液封直拉法 |
| Makulidwe a Wafer | 350 mpaka 625 mm |
| Kuwongolera | <100> / <111> / <110> kapena ena |
| Mtundu wa Conductive | P - mtundu / N - mtundu / Semi-insulating |
| Mtundu/Dopant | Zn / Si / osasinthidwa |
| Carrier Concentration | 1E17 ~ 5E19 cm-3 |
| Kukaniza ku RT | ≥1E7 ya SI |
| Kuyenda | ≥4000 |
| EPD (Etch Pit Density) | 100 ~ 1E5 |
| TTV | ≤ 10 um |
| Bow / Warp | ≤ 20 um |
| Pamwamba Pamwamba | DSP/SSP |
| Laser Mark |
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| Gulu | Epi opukutidwa giredi / makina kalasi |










