Zithunzi za SOI

Kufotokozera Kwachidule:

Chophika cha SOI ndi chofanana ndi masangweji okhala ndi zigawo zitatu; Kuphatikizira pamwamba wosanjikiza (chipangizo wosanjikiza), pakati pa m'manda mpweya wosanjikiza (kwa insulating SiO2 wosanjikiza) ndi pansi gawo lapansi (zochuluka pakachitsulo). Zowotcha za SOI zimapangidwa pogwiritsa ntchito njira ya SIMOX ndi ukadaulo wophatikizira wophatikizika, womwe umalola zigawo zowonda komanso zolondola kwambiri za chipangizocho, makulidwe a yunifolomu komanso kusasunthika kochepa.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Zophika za SOI (1)

Malo ogwiritsira ntchito

1. Magawo ophatikizika othamanga kwambiri

2. Zida za Microwave

3. Kutentha kwakukulu kozungulira dera

4. Zida zamagetsi

5. Low mphamvu Integrated dera

6. MEMS

7. Low voteji Integrated dera

Kanthu		Kukangana
Zonse	Wafer Diameter 晶圆尺寸(mm)	50/75/100/125/150/200mm±25um
	Bow / Warp 翘曲度(	<10um
	Tinthu ting'onoting'ono 颗粒度(	0.3um <30ea
	Ma Flats/Notch 定位边/定位槽	Lathyathyathya kapena Notch
	Kupatula M'mphepete 边缘去除(mm)	/
Chipangizo Chachingwe 器件层	Chipangizo-wosanjikiza Mtundu/Dopant 器件层掺杂类型	N-Type/P-Type B / P / Sb / Monga
	Chipangizo-wosanjikiza Oriental 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Chipangizo-wosanjikiza makulidwe 器件层厚度(um)	0.1-300um
	Chipangizo-wosanjikiza Resistivity 器件层电阻率(ohm•cm)	0.001 ~ 100,000 ohm-masentimita
	Chipangizo-wosanjikiza Tinthu 器件层颗粒度(	<30ea@0.3
	Chipangizo Chachikulu cha TTV 器件层TTV(	<10um
	Device Layer Finish 器件层表面处理	Wopukutidwa
BOX	Kukhuthala kwa Oxide Kutentha Kwambiri 埋氧层厚度(um)	50nm(500Å)~15um
Handle Layer 衬底	Handle Wafer Type/Dopant 衬底层类型	N-Type/P-Type B / P / Sb / Monga
	Gwirani ndi Wafer Orientation 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Handle Wafer Resistivity 衬底电阻率(ohm•cm)	0.001 ~ 100,000 ohm-masentimita
	Sungani Makulidwe a Wafer 衬底厚度(um)	> 100um
	Phatikizani Wafer Finish 衬底表面处理	Wopukutidwa
Zophika za SOI zazomwe mukufuna zitha kusinthidwa malinga ndi zomwe makasitomala amafuna.