Silicon nitride yolumikizidwa ndi silicon carbide
Si3N4 yomangidwa ndi SiC ceramic refractory material, imasakanizidwa ndi ufa wapamwamba kwambiri wa SIC ndi Silicon ufa, pambuyo poponyera njira, zomwe zimapangidwira pansi pa 1400 ~ 1500 ° C. Pa nthawi ya sintering, kudzaza nayitrogeni mkulu koyera mu ng'anjo, ndiye pakachitsulo amachitira ndi Nayitrogeni ndi kupanga Si3N4, Choncho Si3N4 bonded SiC zinthu wapangidwa silicon nitride (23%) ndi silicon carbide (75%) monga zopangira zazikulu. , wothira zinthu organic, ndi kuwumbidwa ndi osakaniza, extrusion kapena kuthira, ndiye anapanga pambuyo kuyanika ndi nitrogenization.
Mbali ndi ubwino:
1.High kutentha kulolerana
2.High matenthedwe conductivity ndi kukaniza mantha
3.Mkulu wamakina mphamvu ndi kukana abrasion
4.Kupambana kwamphamvu kwamphamvu komanso kukana dzimbiri
Timapereka zida za ceramic zamtundu wapamwamba kwambiri komanso zolondola kwambiri za NSiC zomwe zimayendetsedwa ndi
1.Slip casting
2.Kutulutsa
3.Uni Axial Pressing
4.Isostatic Pressing
Material Datasheet
>Kupanga Kwamankhwala | Sic | 75% |
Si3N4 | ≥23% | |
Free Si | 0% | |
Kuchulukana (g/cm3) | 2.70~2.80 | |
Kuwoneka kwa porosity (%) | 12~15 | |
Bend mphamvu pa 20 ℃(MPa) | 180~190 | |
Bend mphamvu pa 1200 ℃(MPa) | 207 | |
Bend mphamvu pa 1350 ℃(MPa) | 210 | |
Mphamvu zopondereza pa 20 ℃(MPa) | 580 | |
Thermal conductivity pa 1200 ℃ (w/mk) | 19.6 | |
Kukula kowonjezera kwamafuta pa1200 ℃(x 10-6/C) | 4.70 | |
Thermal shock resistance | Zabwino kwambiri | |
Max. kutentha (℃) | 1600 |