SiC-Coated Epitaxial Reactor Barrel

Kufotokozera Kwachidule:

Semicera imapereka mitundu yambiri ya susceptors ndi zigawo za graphite zomwe zimapangidwira ma epitaxy reactors osiyanasiyana.

Kupyolera mu mgwirizano wamakina ndi ma OEM otsogola m'makampani, ukadaulo wazinthu zambiri, komanso luso lapamwamba lopanga, Semicera imapereka mapangidwe ogwirizana kuti akwaniritse zomwe mukufuna. Kudzipereka kwathu pakuchita bwino kumatsimikizira kuti mumalandira mayankho oyenera pazosowa zanu za epitaxy reactor.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Kufotokozera

Kampani yathu imaperekaKupaka kwa SiCntchito ntchito padziko graphite, zoumba ndi zipangizo zina ndi CVD njira, kotero kuti mpweya wapadera munali mpweya ndi pakachitsulo akhoza kuchita pa kutentha kwambiri kupeza mkulu-chiyero Sic mamolekyu, amene waikidwa pamwamba pa zinthu TACHIMATA kuti apangeChitetezo cha SiCkwa mtundu wa epitaxy barrel hy pnotic.

zikomo (1)

zikomo (2)

Main Features

1. Kutentha kwakukulu kwa okosijeni kukana:
kukana kwa okosijeni kumakhalabe kwabwino kwambiri pamene kutentha kumafika pa 1600 C.
2. Chiyero chachikulu: chopangidwa ndi kuyika kwa nthunzi wamankhwala pansi pa kutentha kwambiri kwa chlorination.
3. Kukana kukokoloka kwa nthaka: kuuma kwakukulu, pamwamba, tinthu tating'onoting'ono.
4. Kukana kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.

Zofunika Kwambiri za CVD-SIC Coating

SiC-CVD Properties
Kapangidwe ka Crystal	FCC β gawo
Kuchulukana	g/cm³	3.21
Kuuma	Vickers kuuma	2500
Ukulu wa Mbewu	μm	2-10
Chemical Purity	%	99.99995
Kutentha Mphamvu	J·kg-1 ·K-1	640
Kutentha kwa Sublimation	℃	2700
Felexural Mphamvu	MPa (RT 4-point)	415
Young's Modulus	Gpa (4pt bend, 1300 ℃)	430
Kukula kwa Thermal (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300