Silicon carbide cantilever paddle

Kufotokozera Kwachidule:

Silicon carbide paddle, yomwe imadziwikanso kuti silicon carbide cantilever paddle, silicon carbide cantilever beam ndi mtundu wa zinthu za silicon carbide ceramic pambuyo pa 1850.℃kutentha kwambiri sintering, koma kutentha sintering pakachitsulo carbide ceramic ndi wapadera ceramic mankhwala, ndi particles zabwino.α-SiC ndi zowonjezera zimakanikizidwa mu chopanda kanthu, pokhudzana ndi silicon yamadzimadzi kutentha kwambiri, mpweya wopanda kanthu ndi kulowa kwa Si reaction, kupangaβ-SiC,Ndipo kuphatikiza ndi α-SiC, silicon yaulere idadzaza porosity, kuti apeze zida za ceramic zolimba kwambiri; Lili ndi zinthu zosiyanasiyana zapamwamba zamafakitale zoumba.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

SiC Cantilever paddleikugwiritsidwa ntchito mu ng'anjo yopaka ng'anjo ya mafakitale a photovoltaic popaka zophika za silicon za monocrystalline ndi polycrystalline. Maonekedwe ake amawathandiza kuti azitha kupirira kutentha kwambiri ndi dzimbiri, zomwe zimapatsa moyo wautali.
TheSiC Cantilever paddleimapereka mabwato a SiC / quartz omwe amanyamula zowotcha za silicon mu chubu cha ng'anjo yotentha kwambiri.
Utali wathuSiC Cantilever paddlekuyambira 1,500 mpaka 3,500 mm.SiC Cantilever paddledimension akhoza kupangidwa molingana ndi zomwe kasitomala akufuna.

Zakuthupi za Recrystallized Silicon Carbide
Katundu	Mtengo Wodziwika
Kutentha kogwira ntchito (°C)	1600 ° C (ndi mpweya), 1700 ° C (kuchepetsa chilengedwe)
Zinthu za SiC	99.96%
Zaulere za Si	<0.1%
Kuchulukana kwakukulu	2.60-2.70 g / masentimita³
Zowoneka porosity	< 16%
Kupanikizika kwamphamvu	> 600 MPa
Kuzizira kopinda mphamvu	80-90 MPa (20°C)
Mphamvu yopindika yotentha	90-100 MPa (1400°C)
Kukula kwa kutentha pa 1500°C	4.70 10^-6/°C
Thermal conductivity @ 1200 ° C	23 W/m•K
Elastic moduli	240 GPA
Thermal shock resistance	Zabwino kwambiri