Mafotokozedwe Akatundu
4h-n 4inch 6inch dia100mm sic mbewu mtanda makulidwe 1mm kukula ingot
Kukula kosinthidwa / 2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silikoni carbide single crystal (sic) magawo opatuliraS/ Zophatikizika ngati odulidwa sic wafersKupanga 4inch kalasi 4H-N 1.5mm SIC Wafers wa mbewu kristalo
Za Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), yomwe imadziwikanso kuti carborundum, ndi semiconductor yokhala ndi silicon ndi kaboni yokhala ndi fomula yamankhwala SiC. SiC imagwiritsidwa ntchito pazida zamagetsi za semiconductor zomwe zimagwira ntchito kutentha kwambiri kapena kutentha kwambiri, kapena zonse ziwiri.SiC ndi chimodzi mwazinthu zofunika kwambiri za LED, ndi gawo lodziwika bwino lazida za GaN, komanso limagwira ntchito ngati chofalitsa kutentha m'malo okwera kwambiri. magetsi a LED.
Kufotokozera
| Katundu | 4H-SiC, Single Crystal | 6H-SiC, Crystal Single |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | Mtengo wa ABCB | Mtengo wa ABCACB |
| Mohs Kuuma | ≈9.2 | ≈9.2 |
| Kuchulukana | 3.21g/cm3 | 3.21g/cm3 |
| Therm. Kukulitsa Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | ayi = 2.61 | ayi = 2.60 |
| Dielectric Constant | c 9.66 | c 9.66 |
| Thermal Conductivity (N-mtundu, 0.02 ohm.cm) | a~4.2 W/cm·K@298K |
|
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Munda Wamagetsi Wophwanyika | 3-5 × 106V / masentimita | 3-5 × 106V / masentimita |
| Saturation Drift Velocity | 2.0 × 105m/s | 2.0 × 105m/s |
