Semiconductor Silicon yochokera ku GaN epitaxy

Semiconductor Silicon based GaN epitaxy Featured Image

Kufotokozera Kwachidule:

Semicera Energy Technology Co., Ltd. ndiwotsogola wotsogola wa zida zapamwamba za semiconductor komanso wopanga yekha ku China yemwe atha kupereka nthawi imodzi yoyera ya silicon carbide ceramic (makamaka Recrystallized SiC) ndi zokutira za CVD SiC. Kuphatikiza apo, kampani yathu idadziperekanso ku minda ya ceramic monga aluminiyamu nitride, zirconia, ndi silicon nitride, etc.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Mafotokozedwe Akatundu

Kampani yathu imapereka ntchito zokutira za SiC pogwiritsa ntchito njira ya CVD pamtunda wa graphite, zoumba ndi zinthu zina, kotero kuti mpweya wapadera wokhala ndi mpweya ndi silicon umachita pa kutentha kwambiri kuti upeze mamolekyu apamwamba a SiC, mamolekyu oyikidwa pamwamba pa zinthu zokutira, kupanga SIC chitetezo wosanjikiza.

Zofunikira zazikulu:

1. Kutentha kwakukulu kwa okosijeni kukana:

kukana kwa okosijeni kumakhalabe kwabwino kwambiri pamene kutentha kumafika pa 1600 C.

2. Chiyero chachikulu: chopangidwa ndi kuyika kwa nthunzi wamankhwala pansi pa kutentha kwambiri kwa chlorination.

3. Kukana kukokoloka kwa nthaka: kuuma kwakukulu, pamwamba, tinthu tating'onoting'ono.

4. Kukana kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.

Zofunika Kwambiri za CVD-SIC Coating

SiC-CVD Properties
Kapangidwe ka Crystal	FCC β gawo
Kuchulukana	g/cm³	3.21
Kuuma	Vickers kuuma	2500
Ukulu wa Mbewu	μm	2-10
Chemical Purity	%	99.99995
Kutentha Mphamvu	J·kg-1 ·K-1	640
Kutentha kwa Sublimation	℃	2700
Felexural Mphamvu	MPa (RT 4-point)	415
Young's Modulus	Gpa (4pt bend, 1300 ℃)	430
Kukula kwa Thermal (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300