CVD Bulk Silicon Carbide (SiC)
Mwachidule:CVDsilicon carbide wambiri (SiC)ndi zinthu zomwe zimafunidwa kwambiri mu zida za plasma etching, ntchito zachangu zamafuta (RTP), ndi njira zina zopangira semiconductor. Makina ake apadera, mankhwala, komanso kutentha kwake kumapangitsa kukhala chinthu choyenera kugwiritsa ntchito ukadaulo wapamwamba womwe umafuna kulondola kwambiri komanso kulimba.
Kugwiritsa ntchito CVD Bulk SiC:Bulk SiC ndiyofunika kwambiri pamakampani opangira zida zamagetsi, makamaka pamakina a plasma etching, pomwe zinthu monga mphete zoyang'ana, ma shawa a gasi, mphete zam'mphepete, ndi ma platens amapindula ndi kukana kwa dzimbiri kwa SiC komanso kusinthasintha kwamafuta. Kugwiritsa ntchito kwake kumapitilira mpakaRTPmachitidwe chifukwa cha kuthekera kwa SiC kupirira kusinthasintha kwa kutentha popanda kuwonongeka kwakukulu.
Kuphatikiza pa etching zida, CVDzambiri SiCimayamikiridwa m'ng'anjo zoyatsirana komanso kukula kwa kristalo, komwe kukhazikika kwamafuta ambiri komanso kukana kumadera ovuta kumafunikira. Makhalidwe amenewa amapangitsa SiC kukhala chinthu chosankhika pamagwiritsidwe ntchito ofunikira kwambiri ophatikiza kutentha kwambiri ndi mpweya wowononga, monga womwe uli ndi chlorine ndi fluorine.
Ubwino wa CVD Bulk SiC Components:
•Kuchulukana Kwambiri:Ndi kachulukidwe 3.2 g/cm³,Mtengo wapatali wa magawo CVDzigawo zikuluzikulu kugonjetsedwa ndi kuvala ndi kukhudza makina.
•Superior Thermal Conductivity:Kupereka matenthedwe matenthedwe a 300 W/m·K, yochuluka ya SiC imayendetsa bwino kutentha, kumapangitsa kukhala koyenera kuzinthu zomwe zimayang'aniridwa ndi kutentha kwambiri.
•Kukana Kwapadera Kwa Chemical:Kutsika kocheperako kwa SiC yokhala ndi mipweya yowotcha, kuphatikiza mankhwala a chlorine ndi fluorine, kumatsimikizira moyo wautali wazinthu.
•Adjustable Resistivity: Mtengo wapatali wa magawo CVDresistivity imatha kusinthidwa mwamakonda mkati mwa 10⁻²–10⁴ Ω-cm, ndikupangitsa kuti ikhale yogwirizana ndi zosowa za etching ndi semiconductor yopanga.
•Thermal Expansion Coefficient:Ndi mphamvu yowonjezera kutentha kwa 4.8 x 10⁻⁶/°C (25–1000°C), CVD yochuluka ya SiC imalimbana ndi kutenthedwa kwa kutentha, kusunga bata la dimensional ngakhale panthawi yotentha ndi kuzizira kofulumira.
•Kukhalitsa mu Plasma:Kuwonekera kwa plasma ndi mpweya wokhazikika ndikosapeweka mu njira za semiconductor, komaMtengo wapatali wa magawo CVDimapereka kukana kwapamwamba kwa dzimbiri ndi kuwonongeka, kuchepetsa kusinthasintha kwafupipafupi komanso ndalama zonse zokonzekera.
Zokonda Zaukadaulo:
•Diameter:Kuposa 305 mm
•Kukaniza:Zosinthika mkati mwa 10⁻²–10⁴ Ω-cm
•Kachulukidwe:3.2g/cm³
•Thermal Conductivity:300 W/m·K
•Thermal Expansion Coefficient:4.8 x 10⁻⁶/°C (25–1000°C)
Kusintha mwamakonda ndi kusinthasintha:PaSemicera Semiconductor, timamvetsetsa kuti ntchito iliyonse ya semiconductor ingafune kusiyanasiyana. Ichi ndichifukwa chake zigawo zathu za CVD zambiri za SiC ndizosintha mwamakonda, zokhala ndi mphamvu zosinthika komanso miyeso yofananira kuti igwirizane ndi zosowa zanu za zida. Kaya mukukhathamiritsa makina anu a plasma etching kapena mukuyang'ana zida zolimba mu RTP kapena njira zoyatsira, SiC yathu yochuluka ya CVD imapereka magwiridwe antchito osayerekezeka.
