Semicera's P-mtundu wa SiC Substrate Wafer ndi gawo lofunikira popanga zida zapamwamba zamagetsi ndi ma optoelectronic. Zophika izi zidapangidwa makamaka kuti zizipereka magwiridwe antchito apamwamba m'malo amphamvu kwambiri komanso kutentha kwambiri, kuthandizira kufunikira kwazinthu zofunikira komanso zolimba.
Doping yamtundu wa P mu zowotcha zathu za SiC zimatsimikizira kuwongolera kwamagetsi komanso kuyenda kwa chonyamulira. Izi zimawapangitsa kukhala oyenerera makamaka kugwiritsa ntchito zamagetsi zamagetsi, ma LED, ndi ma cell a photovoltaic, komwe kutayika kwa mphamvu zochepa komanso kuchita bwino kwambiri ndikofunikira.
Wopangidwa ndi miyezo yapamwamba kwambiri komanso yabwino kwambiri, zowotcha za Semicera za P-mtundu wa SiC zimapereka mawonekedwe apamwamba kwambiri komanso ziwongola dzanja zochepa. Makhalidwewa ndi ofunikira m'mafakitale omwe kusasinthika ndi kudalirika ndikofunikira, monga gawo lazamlengalenga, magalimoto, ndi mphamvu zongowonjezwdwanso.
Kudzipereka kwa Semicera pazatsopano komanso kuchita bwino kumawonekera mu mtundu wathu wa P-SiC Substrate Wafer. Pophatikizira zopatulirazi pakupanga kwanu, mumawonetsetsa kuti zida zanu zimapindula ndi matenthedwe apadera amagetsi ndi magetsi a SiC, kuwapangitsa kuti azigwira ntchito bwino pamavuto.
Kuyika ndalama mu Semicera's P-mtundu wa SiC Substrate Wafer kumatanthauza kusankha chinthu chomwe chimaphatikiza sayansi yamakono ndi uinjiniya waluso. Semicera idadzipereka kuti ithandizire m'badwo wotsatira waukadaulo wamagetsi ndi optoelectronic, ndikupatseni zida zofunika kuti muchite bwino pamakampani opanga ma semiconductor.
Zinthu | Kupanga | Kafukufuku | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kulakwitsa koyang'ana pamwamba | <11-20>4±0.15° | ||
Magetsi Parameters | |||
Dopant | n-mtundu wa Nayitrogeni | ||
Kukaniza | 0.015-0.025ohm · masentimita | ||
Mechanical Parameters | |||
Diameter | 150.0 ± 0.2mm | ||
Makulidwe | 350±25 μm | ||
Choyambira chapansi pamayendedwe | [1-100] ± 5° | ||
Kutalika kosalala koyambirira | 47.5 ± 1.5mm | ||
Sekondale flat | Palibe | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Kugwada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Kapangidwe | |||
Kuchuluka kwa Micropipe | <1 pa/cm2 | <10 pa/cm2 | <15 pa/cm2 |
Zitsulo zonyansa | ≤5E10 maatomu/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 pa/cm2 | ≤1000 E/cm2 | NA |
Front Quality | |||
Patsogolo | Si | ||
Kumaliza pamwamba | Si-nkhope CMP | ||
Tinthu ting'onoting'ono | ≤60ea/wafer (kukula ≥0.3μm) | NA | |
Zokanda | ≤5ea/mm. Kutalika kwake ≤Diameter | Kutalika kokwanira≤2 * Diameter | NA |
Peel/maenje/madontho/mikwingwirima/ ming'alu/kuipitsidwa | Palibe | NA | |
M'mphepete tchipisi / indents / fracture / hex mbale | Palibe | ||
Magawo a polytype | Palibe | Malo owonjezera≤20% | Malo owonjezera ≤30% |
Chizindikiro cha laser chakutsogolo | Palibe | ||
Back Quality | |||
Kumbuyo komaliza | C-nkhope CMP | ||
Zokanda | ≤5ea/mm,Cumulative kutalika≤2*Diameter | NA | |
Zowonongeka zam'mbuyo (zolowera m'mphepete / ma indents) | Palibe | ||
Msana roughness | Ra≤0.2nm (5μm*5μm) | ||
Chizindikiro cha laser kumbuyo | 1 mm (kuchokera m'mphepete) | ||
M'mphepete | |||
M'mphepete | Chamfer | ||
Kupaka | |||
Kupaka | Epi-okonzeka ndi zoyika vacuum Kupaka makaseti amitundu yambiri | ||
*Zindikirani: "NA" zikutanthauza kuti palibe pempho Zinthu zomwe sizinatchulidwe zingatanthauze SEMI-STD. |