P-mtundu wa SiC Substrate Wafer

Kufotokozera Kwachidule:

Semicera's P-type SiC Substrate Wafer idapangidwa kuti ikhale yamagetsi apamwamba kwambiri komanso optoelectronic. Zophika izi zimapereka kusinthasintha kwapadera komanso kukhazikika kwamafuta, kuwapangitsa kukhala abwino pazida zogwira ntchito kwambiri. Ndi Semicera, yembekezerani kulondola komanso kudalirika pamapaipi anu amtundu wa P-SiC.


Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Semicera's P-mtundu wa SiC Substrate Wafer ndi gawo lofunikira popanga zida zapamwamba zamagetsi ndi ma optoelectronic. Zophika izi zidapangidwa makamaka kuti zizipereka magwiridwe antchito apamwamba m'malo amphamvu kwambiri komanso kutentha kwambiri, kuthandizira kufunikira kwazinthu zofunikira komanso zolimba.

Doping yamtundu wa P mu zowotcha zathu za SiC zimatsimikizira kuwongolera kwamagetsi komanso kuyenda kwa chonyamulira. Izi zimawapangitsa kukhala oyenerera makamaka kugwiritsa ntchito zamagetsi zamagetsi, ma LED, ndi ma cell a photovoltaic, komwe kutayika kwa mphamvu zochepa komanso kuchita bwino kwambiri ndikofunikira.

Wopangidwa ndi miyezo yapamwamba kwambiri komanso yabwino kwambiri, zowotcha za Semicera za P-mtundu wa SiC zimapereka mawonekedwe apamwamba kwambiri komanso ziwongola dzanja zochepa. Makhalidwewa ndi ofunikira m'mafakitale omwe kusasinthika ndi kudalirika ndikofunikira, monga gawo lazamlengalenga, magalimoto, ndi mphamvu zongowonjezwdwanso.

Kudzipereka kwa Semicera pazatsopano komanso kuchita bwino kumawonekera mu mtundu wathu wa P-SiC Substrate Wafer. Pophatikizira zopatulirazi pakupanga kwanu, mumawonetsetsa kuti zida zanu zimapindula ndi matenthedwe apadera amagetsi ndi magetsi a SiC, kuwapangitsa kuti azigwira ntchito bwino pamavuto.

Kuyika ndalama mu Semicera's P-mtundu wa SiC Substrate Wafer kumatanthauza kusankha chinthu chomwe chimaphatikiza sayansi yamakono ndi uinjiniya waluso. Semicera idadzipereka kuti ithandizire m'badwo wotsatira waukadaulo wamagetsi ndi optoelectronic, ndikupatseni zida zofunika kuti muchite bwino pamakampani opanga ma semiconductor.

Zinthu

Kupanga

Kafukufuku

Dummy

Crystal Parameters

Polytype

4H

Kulakwitsa koyang'ana pamwamba

<11-20>4±0.15°

Magetsi Parameters

Dopant

n-mtundu wa Nayitrogeni

Kukaniza

0.015-0.025ohm · masentimita

Mechanical Parameters

Diameter

150.0 ± 0.2mm

Makulidwe

350±25 μm

Choyambira chapansi pamayendedwe

[1-100] ± 5°

Kutalika kosalala koyambirira

47.5 ± 1.5mm

Sekondale flat

Palibe

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Kugwada

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Kapangidwe

Kuchuluka kwa Micropipe

<1 pa/cm2

<10 pa/cm2

<15 pa/cm2

Zitsulo zonyansa

≤5E10 maatomu/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 pa/cm2

≤1000 E/cm2

NA

Front Quality

Patsogolo

Si

Kumaliza pamwamba

Si-nkhope CMP

Tinthu ting'onoting'ono

≤60ea/wafer (kukula ≥0.3μm)

NA

Zokanda

≤5ea/mm. Kutalika kwake ≤Diameter

Kutalika kokwanira≤2 * Diameter

NA

Peel/maenje/madontho/mikwingwirima/ ming'alu/kuipitsidwa

Palibe

NA

M'mphepete tchipisi / indents / fracture / hex mbale

Palibe

Magawo a polytype

Palibe

Malo owonjezera≤20%

Malo owonjezera ≤30%

Chizindikiro cha laser chakutsogolo

Palibe

Back Quality

Kumbuyo komaliza

C-nkhope CMP

Zokanda

≤5ea/mm,Cumulative kutalika≤2*Diameter

NA

Zowonongeka zam'mbuyo (zolowera m'mphepete / ma indents)

Palibe

Msana roughness

Ra≤0.2nm (5μm*5μm)

Chizindikiro cha laser kumbuyo

1 mm (kuchokera m'mphepete)

M'mphepete

M'mphepete

Chamfer

Kupaka

Kupaka

Epi-okonzeka ndi zoyika vacuum

Kupaka makaseti amitundu yambiri

*Zindikirani: "NA" zikutanthauza kuti palibe pempho Zinthu zomwe sizinatchulidwe zingatanthauze SEMI-STD.

tech_1_2_size
Zophika za SiC

  • Zam'mbuyo:
  • Ena: