Kukula kwa Epitaxial ndi teknoloji yomwe imamera kristalo imodzi pa gawo limodzi la kristalo (gawo lapansi) lomwe lili ndi mawonekedwe a kristalo monga gawo lapansi, ngati kuti kristalo yoyambirira yafalikira kunja. Wosanjikiza watsopano wa kristalo uyu amatha kukhala wosiyana ndi gawo lapansi potengera mtundu wa conductivity, resistivity, etc., ndipo amatha kukulitsa makhiristo osanjikiza angapo okhala ndi makulidwe osiyanasiyana ndi zofunika zosiyanasiyana, motero kuwongolera kwambiri kusinthasintha kwa kapangidwe ka chipangizo ndi magwiridwe antchito a chipangizocho. Kuphatikiza apo, njira ya epitaxial imagwiritsidwanso ntchito kwambiri muukadaulo wa PN junction isolation m'mabwalo ophatikizika komanso kukonza zinthu zabwino m'mabwalo akuluakulu ophatikizika.
Magulu a epitaxy makamaka amachokera ku mitundu yosiyanasiyana ya mankhwala a gawo lapansi ndi epitaxial wosanjikiza ndi njira zosiyanasiyana za kukula.
Malinga ndi zolemba zosiyanasiyana zamakina, kukula kwa epitaxial kumatha kugawidwa m'mitundu iwiri:
1. Homoepitaxial: Pamenepa, epitaxial layer ili ndi mankhwala ofanana ndi gawo lapansi. Mwachitsanzo, silicon epitaxial layers amakula mwachindunji pazitsulo za silicon.
2. Heteroepitaxy: Apa, mankhwala a epitaxial layer ndi osiyana ndi a gawo lapansi. Mwachitsanzo, gallium nitride epitaxial layer imamera pagawo la safiro.
Malinga ndi njira zosiyanasiyana zakukulira, ukadaulo wa kukula kwa epitaxial ungathenso kugawidwa m'mitundu yosiyanasiyana:
1. Molecular beam epitaxy (MBE): Iyi ndi teknoloji yokulitsa mafilimu opyapyala a galasi limodzi pazitsulo za kristalo imodzi, zomwe zimatheka poyang'anira bwino mlingo wa kayendedwe ka molekyulu ndi kachulukidwe kazitsulo mu ultra-high vacuum.
2. Metal-organic chemical vapor deposition (MOCVD): Ukadaulo uwu umagwiritsa ntchito zitsulo-organic mankhwala ndi mpweya-gawo reagents kuchita mankhwala zochita pa kutentha kwapamwamba kupanga zofunika woonda filimu zipangizo. Imakhala ndi ntchito zambiri pokonzekera zida ndi zida za semiconductor.
3. Liquid phase epitaxy (LPE): Powonjezera zinthu zamadzimadzi ku gawo limodzi la kristalo ndikuchita chithandizo cha kutentha pa kutentha kwina, zinthu zamadzimadzi zimapangidwira kupanga filimu imodzi ya kristalo. Mafilimu okonzedwa ndi teknolojiyi amafanana ndi lattice ndi gawo lapansi ndipo nthawi zambiri amagwiritsidwa ntchito pokonzekera zipangizo zopangira semiconductor ndi zipangizo.
4. Vapor phase epitaxy (VPE): Imagwiritsa ntchito ma reactants a gaseous kuti achitepo kanthu pa kutentha kwambiri kuti apange filimu yopyapyala yofunikira. Ukadaulo uwu ndi woyenera kukonzekera mafilimu akulu akulu, apamwamba kwambiri amtundu umodzi wa kristalo, ndipo ndiwopambana kwambiri pokonzekera zida ndi zida za semiconductor.
5. Chemical beam epitaxy (CBE): Tekinoloje iyi imagwiritsa ntchito matabwa a mankhwala kuti akule mafilimu a kristalo amodzi pamagulu amodzi a kristalo, omwe amapindula mwa kulamulira bwino mlingo wa kayendedwe ka mankhwala ndi kachulukidwe ka mtengo. Ili ndi ntchito zambiri pokonzekera mafilimu apamwamba kwambiri a kristalo.
6. Epitaxy wosanjikiza wa atomiki (ALE): Pogwiritsa ntchito ukadaulo woyika ma atomiki, zida zowonda zamakanema zimayikidwa wosanjikiza pagawo limodzi la kristalo. Tekinoloje iyi imatha kukonzekera mafilimu apamwamba kwambiri, apamwamba kwambiri amtundu umodzi wa kristalo ndipo nthawi zambiri amagwiritsidwa ntchito pokonzekera zida ndi zida za semiconductor.
7. Hot wall epitaxy (HWE): Kupyolera mu kutentha kwapamwamba kwambiri, mpweya wotulutsa mpweya umayikidwa pa gawo limodzi la kristalo kuti apange filimu imodzi ya kristalo. Tekinoloje iyi ndi yoyeneranso kukonzekera mafilimu akuluakulu, apamwamba kwambiri amtundu umodzi wa kristalo, ndipo amagwiritsidwa ntchito makamaka pokonzekera zida ndi zida za semiconductor.
Nthawi yotumiza: May-06-2024