Silicon carbide (SiC)ndichinthu chofunikira kwambiri cha bandgap semiconductor chomwe chimagwiritsidwa ntchito kwambiri pazida zamagetsi zamphamvu kwambiri komanso zothamanga kwambiri. Zotsatirazi ndi zina zofunika magawo amapepala a silicon carbidendi mafotokozedwe awo mwatsatanetsatane:
Lattice Parameters:
Onetsetsani kuti lattice yokhazikika ya gawo lapansi ikugwirizana ndi epitaxial layer kuti ikule kuti muchepetse zolakwika ndi kupsinjika.
Mwachitsanzo, 4H-SiC ndi 6H-SiC ali ndi zosiyana siyana za lattice, zomwe zimakhudza khalidwe lawo la epitaxial ndi machitidwe a chipangizo.
Masanjidwe:
SiC imapangidwa ndi maatomu a silikoni ndi maatomu a kaboni mu chiŵerengero cha 1: 1 pamlingo waukulu, koma dongosolo la ma atomiki la zigawo za atomiki ndi losiyana, lomwe lidzapanga mitundu yosiyanasiyana ya kristalo.
Mitundu ya kristalo wamba imaphatikizapo 3C-SiC (kapangidwe ka cubic), 4H-SiC (mawonekedwe a hexagonal), ndi 6H-SiC (mawonekedwe a hexagonal), ndipo zotsatizana zofananira ndizo: ABC, ABCB, ABCACB, ndi zina. mawonekedwe ndi mawonekedwe akuthupi, kotero kusankha mawonekedwe oyenera a kristalo ndikofunikira pakugwiritsa ntchito mwapadera.
Kuuma kwa Mohs: Kumatsimikizira kuuma kwa gawo lapansi, komwe kumakhudza kumasuka kwa kukonza ndi kuvala kukana.
Silicon carbide imakhala ndi kuuma kwambiri kwa Mohs, nthawi zambiri pakati pa 9-9.5, zomwe zimapangitsa kuti zikhale zolimba kwambiri zomwe zimayenera kugwiritsidwa ntchito zomwe zimafuna kukana kuvala kwambiri.
Kachulukidwe: Zimakhudza mphamvu zamakina ndi kutentha kwa gawo lapansi.
Kachulukidwe wamkulu nthawi zambiri amatanthauza mphamvu zamakina komanso mphamvu zamatenthedwe.
Kuwonjeza Koyelekeza kwa Matenthedwe: Kumatanthawuza kuwonjezereka kwa utali kapena voliyumu ya gawo lapansi mogwirizana ndi utali woyambirira kapena voliyumu pamene kutentha kumakwera ndi digirii imodzi ya Celsius.
Kukwanira pakati pa gawo lapansi ndi epitaxial wosanjikiza pansi pa kusintha kwa kutentha kumakhudza kukhazikika kwa kutentha kwa chipangizocho.
Refractive Index: Pazogwiritsa ntchito kuwala, index refractive ndiye gawo lofunikira pakupanga zida za optoelectronic.
Kusiyana kwa refractive index kumakhudza liwiro ndi njira ya mafunde a kuwala muzinthu.
Dielectric Constant: Imakhudza mawonekedwe a chipangizocho.
Kutsika kwa dielectric kumathandizira kuchepetsa mphamvu ya parasitic ndikuwongolera magwiridwe antchito a chipangizocho.
Thermal Conductivity:
Zofunikira pakugwiritsa ntchito mphamvu zambiri komanso kutentha kwambiri, zomwe zimakhudza kuzizira kwa chipangizocho.
Kutentha kwapamwamba kwa silicon carbide kumapangitsa kuti ikhale yoyenera pazida zamagetsi zamphamvu kwambiri chifukwa imatha kuyendetsa bwino kutentha kutali ndi chipangizocho.
Band gap:
Zimatanthawuza kusiyana kwa mphamvu pakati pa pamwamba pa gulu la valence ndi pansi pa bandi yochititsa chidwi mu semiconductor.
Zida zokhala ndi mipata yambiri zimafuna mphamvu zambiri kuti zithandize kusintha kwa ma elekitironi, zomwe zimapangitsa kuti silicon carbide izichita bwino m'malo otentha kwambiri komanso owala kwambiri.
Malo Opangira Magetsi:
Mphamvu yocheperako yomwe zida za semiconductor zimatha kupirira.
Silicon carbide ili ndi gawo lamagetsi losweka kwambiri, lomwe limalola kuti lizitha kupirira ma voltages apamwamba kwambiri osasweka.
Kuthamanga kwa Saturation Drift:
Kuthamanga kwapakati komwe onyamula amatha kufika pambuyo pa gawo lina lamagetsi atayikidwa mu semiconductor material.
Mphamvu yamagetsi ikawonjezeka kufika pamlingo wina, liwiro la chonyamulira silidzawonjezekanso ndikuwonjezeranso gawo lamagetsi. Kuthamanga pa nthawiyi kumatchedwa kuthamanga kwa machulukitsidwe. SiC ili ndi liwiro lapamwamba la saturation drift, lomwe limapindulitsa pakuzindikira zida zamagetsi zothamanga kwambiri.
Magawo awa palimodzi amatsimikizira magwiridwe antchito ndi kuthekera kwaZophika za SiCm'mapulogalamu osiyanasiyana, makamaka omwe ali m'malo okwera kwambiri, othamanga kwambiri komanso omwe amakhala ndi kutentha kwambiri.
Nthawi yotumiza: Jul-30-2024