Kuyika kwa ion ndi njira yowonjezerera kuchuluka ndi mtundu wa zonyansa mu zida za semiconductor kuti zisinthe mphamvu zawo zamagetsi. Kuchuluka ndi kugawa kwa zonyansa zitha kuyendetsedwa bwino.
Gawo 1
Chifukwa chiyani kugwiritsa ntchito ion implantation process
Popanga zida zamagetsi zamagetsi, P/N dera doping wachikhalidwemapepala a siliconangapezeke mwa kufalitsa. Komabe, kufalikira kosalekeza kwa ma atomu osayera musilicon carbidendi otsika kwambiri, choncho n'zosatheka kukwaniritsa doping kusankha mwa kufalitsa ndondomeko, monga momwe chithunzi 1. Komano, kutentha kwa ion implantation ndi otsika kuposa njira kufalitsa, ndi kusinthasintha ndi molondola kugawa doping akhoza. kupangidwa.
Chithunzi 1 Kufananiza kwa kufalikira ndi ma ion implantation doping technologies mu silicon carbide materials
Gawo 2
Momwe mungakwaniritsiresilicon carbideion implantation
Zida zopangira mphamvu zamagetsi zomwe zimagwiritsidwa ntchito popanga silicon carbide makamaka zimakhala ndi gwero la ion, plasma, zinthu zolakalaka, maginito owunikira, matabwa a ion, machubu othamangitsa, zipinda zopangira, ndi ma disks ojambulira, monga momwe tawonetsera pa Chithunzi 2.
Chithunzi 2 Chithunzi chojambula cha silicon carbide high-energy ion implantation equipment
(Source: "Semiconductor Manufacturing Technology")
Kuyika kwa SiC ion kumachitika pa kutentha kwambiri, komwe kumatha kuchepetsa kuwonongeka kwa crystal lattice chifukwa cha bombardment ya ion. ZaZithunzi za 4H-SiC, kupanga madera amtundu wa N nthawi zambiri kumatheka poyika ma ayoni a nayitrogeni ndi phosphorous, ndi kupangaP-mtundumadera nthawi zambiri amatheka poika ayoni aluminiyamu ndi ayoni a boron.
Table 1. Chitsanzo cha kusankha doping mu SiC kupanga chipangizo
(Source: Kimoto, Cooper, Basics of Silicon Carbide Technology: Kukula, Makhalidwe, Zida, ndi Mapulogalamu)
Chithunzi 3 Kuyerekeza kuyika kwa ma ion amphamvu masitepe ambiri komanso kugawa kwapadziko lonse kwa doping
(Gwero: G.Lulli, Introduction to Ion Implantation)
Kuti akwaniritse ndende ya doping yofananira m'malo oyika ion, mainjiniya nthawi zambiri amagwiritsa ntchito kuyika kwa ma ion masitepe ambiri kuti asinthe kugawa kwathunthu kwa malo oyikamo (monga momwe tawonetsera pa Chithunzi 3); mu ndondomeko yeniyeni yopangira, mwa kusintha mphamvu yopangira mphamvu ndi kuyika mlingo wa ion implanter, doping ndende ndi doping kuya kwa ion implantation dera akhoza kulamulidwa, monga momwe chithunzi 4. (a) ndi (b); ion implantation imapanga yunifolomu implantation ya ion pamtunda wopindika poyang'ana pamwamba pake kangapo panthawi yogwira ntchito, monga momwe tawonetsera pa Chithunzi 4. (c).
(c) Kusuntha kwa choyikapo cha ion panthawi yoyika ion
Chithunzi 4 Pa nthawi ya ion implantation process, ndende yonyansa ndi kuya kwake kumayendetsedwa ndi kusintha mphamvu ya ion implantation ndi mlingo.
III
Kutsegula annealing ndondomeko ya silicon carbide ion implantation
Kukhazikika, malo ogawa, kuchuluka kwa activation, zolakwika m'thupi komanso pamwamba pa ion implantation ndizozigawo zazikulu za njira yoyika ion. Pali zinthu zambiri zomwe zimakhudza zotsatira za magawowa, kuphatikizapo mlingo wa implantation, mphamvu, crystal orientation of the material, implantation kutentha, annealing annealing, annealing time, chilengedwe, etc. Mosiyana ndi silicon ion implantation doping, zimakhala zovuta kuti ionize kwathunthu. zonyansa za silicon carbide pambuyo pa ion implantation doping. Kutengera kuchuluka kwa ionization yolandirira aluminiyumu m'chigawo chosalowerera ndale cha 4H-SiC mwachitsanzo, pamlingo wa 1 × 1017cm-3, kulandila kwa ionization kumakhala pafupifupi 15% kutentha kwachipinda (nthawi zambiri kuchuluka kwa ionization ya silicon kumakhala pafupifupi 100%). Kuti akwaniritse cholinga cha kuchuluka kwa activation ndi zolakwika zochepa, njira yowotchera yotentha kwambiri idzagwiritsidwa ntchito pambuyo pa kuyika kwa ion kukonzanso zolakwika za amorphous zomwe zimapangidwira panthawi yoyika, kuti ma atomu oyikidwa alowe m'malo ndikuyatsidwa, monga momwe tawonetsera. mu Chithunzi 5. Pakali pano, kumvetsa kwa anthu za njira ya annealing akadali ochepa. Kuwongolera ndikumvetsetsa mozama njira yolumikizira ndi imodzi mwazofukufuku zomwe zimayang'ana pakuyika kwa ion m'tsogolomu.
Chithunzi 5 Chithunzi chojambula cha kusintha kwa ma atomiki pamtunda wa silicon carbide ion implantation area isanayambe kapena itatha ion implantation annealing, kumene V.siimayimira ntchito za silicon, VCakuyimira malo a carbon, Ciimayimira maatomu odzaza kaboni, ndi Siiimayimira maatomu odzaza silicon
Kutsegulira kwa ion nthawi zambiri kumaphatikizapo kuyatsa ng'anjo, kuthamangitsa mwachangu komanso kuwotcha laser. Chifukwa sublimation wa ma atomu Si mu zipangizo SiC, kutentha annealing zambiri si upambana 1800 ℃; mpweya woziziritsa mpweya nthawi zambiri umachitika mu mpweya wa mpweya kapena vacuum. Ma ion osiyanasiyana amachititsa malo opunduka osiyanasiyana mu SiC ndipo amafuna kutentha kosiyanasiyana. Kuchokera pazotsatira zambiri zoyesera, tingathe kunena kuti kutentha kwa annealing kukukwera, kumapangitsa kuti muyambe kuyambitsa (monga momwe tawonetsera pa Chithunzi 6).
Chithunzi 6 Zotsatira za kutentha kwa annealing pa mphamvu yamagetsi ya nitrogen kapena phosphorous implantation mu SiC (pa firiji)
(Okwanira kuyika mlingo 1 × 1014cm-2)
(Source: Kimoto, Cooper, Basics of Silicon Carbide Technology: Kukula, Makhalidwe, Zida, ndi Mapulogalamu)
Kawirikawiri ntchito kutsegula annealing ndondomeko pambuyo SiC ion implantation ikuchitika mu Ar atmosphere pa 1600 ℃ ~ 1700 ℃ recrystallize pamwamba SiC ndi yambitsa dopant, potero kuwongolera madutsidwe wa dera doped; musanayambe annealing, wosanjikiza wa filimu ya carbon akhoza yokutidwa pa yopyapyala pamwamba pa chitetezo cha pamwamba kuchepetsa kuwonongeka kwa pamwamba chifukwa Si desorption ndi pamwamba pa atomiki kusamuka, monga momwe chithunzi 7; pambuyo annealing, mpweya filimu akhoza kuchotsedwa ndi makutidwe ndi okosijeni kapena dzimbiri.
Chithunzi 7 Kuyerekeza kuuma kwapamwamba kwa zowotcha za 4H-SiC zokhala ndi kapena popanda chitetezo cha filimu ya kaboni pansi pa kutentha kwa 1800 ℃
(Source: Kimoto, Cooper, Basics of Silicon Carbide Technology: Kukula, Makhalidwe, Zida, ndi Mapulogalamu)
IV
Zotsatira za kuyimitsidwa kwa SiC ion ndikuyambitsa njira yolumikizira
Kuyika kwa ion ndi kutsegulira kotsatira kudzatulutsa zolakwika zomwe zimachepetsa magwiridwe antchito a chipangizocho: zolakwika zovuta, zolakwika zodulira (monga momwe zasonyezedwera pa Chithunzi 8), kusuntha kwatsopano, kuwonongeka kwamphamvu kwakuya kapena kuzama kwamphamvu, malupu oyendetsa ndege ndikuyenda kwa zosokoneza zomwe zilipo. Popeza njira yopangira bombardment yamphamvu ya ion imayambitsa kupsinjika kwa chowotcha cha SiC, kutentha kwambiri komanso kuyika kwamphamvu kwa ion kumapangitsa kuti pakhale nkhondo. Mavutowa asandukanso njira yomwe ikufunika kukonzedwa mwachangu ndikuphunziridwa popanga njira yopangira ma SiC ion implantation ndi annealing.
Chithunzi 8 Chithunzi chojambula cha kufananiza pakati pa makonzedwe abwinobwino a 4H-SiC lattice ndi zolakwika zosiyanasiyana
(Chitsime: Nicolὸ Piluso 4H-SiC Defects)
V.
Kusintha kwa silicon carbide ion implantation process
(1) Filimu yopyapyala ya oxide imasungidwa pamwamba pa malo opangira ion kuti achepetse kuchuluka kwa kuwonongeka komwe kumayambitsidwa ndi kuyika kwa ion yamphamvu kwambiri pamwamba pa silicon carbide epitaxial layer, monga momwe tawonetsera pa Chithunzi 9. (a) .
(2) Sinthani mtundu wa disk yomwe mukufuna kuyika pazida zoyikira ion, kuti chophatikizira ndi disk yomwe mukufuna igwirizane kwambiri, kutenthetsa kwa disk yomwe mukufuna kupita ku chowotcha kumakhala bwino, ndipo zida zimatenthetsa kumbuyo kwa chowotchacho. mofanana, kupititsa patsogolo kutentha kwapamwamba komanso mphamvu ya ion implantation pa silicon carbide wafers, monga momwe tawonetsera pa Chithunzi 9. (b).
(3) Konzani kutentha kwa kutentha ndi kufanana kwa kutentha panthawi yogwiritsira ntchito zipangizo zotentha kwambiri.
Chithunzi 9 Njira zokonolera kachitidwe ka implantation ya ayoni
Nthawi yotumiza: Oct-22-2024