Semicera Semiconductor akukonzekera kukulitsa kupanga zida zapakati pazida zopangira semiconductor padziko lonse lapansi. Pofika chaka cha 2027, tikufuna kukhazikitsa fakitale yatsopano ya 20,000 masikweya mita ndi ndalama zokwana 70 miliyoni USD. Chimodzi mwazinthu zazikuluzikulu zathu, ndisilicon carbide (SiC) chonyamulira chowotcha, yomwe imadziwikanso kuti susceptor, yawona kupita patsogolo kwakukulu. Ndiye, kodi thireyi yomwe imasunga zowotcha ndi chiyani kwenikweni?
Popanga zowotcha, zigawo za epitaxial zimamangidwa pamagawo ena ophatikizika kuti apange zida. Mwachitsanzo, ma GaAs epitaxial layers amakonzedwa pazigawo za silicon pazida za LED, zigawo za SiC epitaxial zimakulitsidwa pazigawo za SiC zopangira mphamvu zamagetsi monga SBDs ndi MOSFETs, ndipo zigawo za GaN epitaxial zimamangidwa pazigawo za Semi-insulating SiC za ntchito za RF monga HEMTs. . Njirayi imadalira kwambiriChemical vapor deposition (CVD)zida.
Mu zida za CVD, magawowo sangathe kuyikidwa mwachindunji pazitsulo kapena maziko osavuta a epitaxial deposition chifukwa cha zinthu zosiyanasiyana monga kutuluka kwa gasi (yopingasa, yoyima), kutentha, kupanikizika, kukhazikika, ndi kuipitsidwa. Chifukwa chake, susceptor imagwiritsidwa ntchito kuyika gawo lapansi, ndikupangitsa kuti epitaxial deposition pogwiritsa ntchito ukadaulo wa CVD. Susceptor uyu ndiyeSiC-yokutidwa ndi graphite susceptor.
Zojambula za graphite zokhala ndi SiC Nthawi zambiri amagwiritsidwa ntchito mu zida za Metal-Organic Chemical Vapor Deposition (MOCVD) kuti zithandizire ndikutenthetsa magawo akristalo amodzi. Kukhazikika kwamafuta ndi kufanana kwa Zojambula za graphite zokhala ndi SiCndizofunika kwambiri pakukula kwa zida za epitaxial, kuzipanga kukhala gawo lalikulu la zida za MOCVD (makampani otsogola a MOCVD monga Veeco ndi Aixtron). Pakalipano, teknoloji ya MOCVD imagwiritsidwa ntchito kwambiri pakukula kwa epitaxial kwa mafilimu a GaN kwa ma LED a buluu chifukwa cha kuphweka kwake, kukula kwake, ndi chiyero chapamwamba. Monga gawo lofunikira la MOCVD reactor, ndisusceptor ya GaN film epitaxial kukulaAyenera kukhala ndi kukana kutentha kwambiri, kusinthasintha kwamafuta ofananirako, kukhazikika kwamankhwala, komanso kukana kugwedezeka kwamphamvu kwamafuta. Graphite imakwaniritsa zofunikira izi mwangwiro.
Monga gawo lalikulu la zida za MOCVD, graphite susceptor imathandizira ndikuwotcha magawo akristalo amodzi, zomwe zimakhudza mwachindunji kufanana ndi kuyera kwazinthu zamakanema. Ubwino wake umakhudza mwachindunji kukonzekera kwa ma epitaxial wafers. Komabe, ndi kuchuluka kwa kugwiritsidwa ntchito komanso kusiyanasiyana kwa magwiridwe antchito, zotengera za graphite zimatha kutha mosavuta ndipo zimawonedwa ngati zogwiritsidwa ntchito.
Ma susceptors a MOCVDakuyenera kukhala ndi mawonekedwe enaake kuti akwaniritse izi:
- - Kuphunzira bwino:Chophimbacho chiyenera kuphimba kwathunthu graphite susceptor ndi kachulukidwe kwambiri kuti ateteze dzimbiri m'malo owononga mpweya.
- - Mphamvu yolumikizana kwambiri:Chophimbacho chiyenera kugwirizana kwambiri ndi graphite susceptor, kupirira maulendo angapo otentha kwambiri komanso otsika kwambiri popanda kupukuta.
- -Kukhazikika kwamankhwala:Chophimbacho chiyenera kukhala chokhazikika kuti chisamalephereke m'malo otentha komanso owononga mpweya.
SiC, yokhala ndi corrosion resistance, high thermal conductivity, thermal shock resistance, ndi kukhazikika kwa mankhwala, imachita bwino mu GaN epitaxial chilengedwe. Kuonjezera apo, mphamvu yowonjezera kutentha kwa SiC ndi yofanana ndi graphite, zomwe zimapangitsa SiC kukhala chinthu chokondedwa cha zokutira za graphite susceptor.
Pakadali pano, mitundu yodziwika bwino ya SiC imaphatikizapo 3C, 4H, ndi 6H, iliyonse yoyenera kugwiritsa ntchito zosiyanasiyana. Mwachitsanzo, 4H-SiC ikhoza kupanga zida zamphamvu kwambiri, 6H-SiC imakhala yokhazikika komanso yogwiritsidwa ntchito pazida za optoelectronic, pamene 3C-SiC ndi yofanana ndi GaN, zomwe zimapangitsa kuti zikhale zoyenera kupanga GaN epitaxial layer production ndi SiC-GaN RF zipangizo. 3C-SiC, yomwe imadziwikanso kuti β-SiC, imagwiritsidwa ntchito makamaka ngati filimu ndi zinthu zokutira, zomwe zimapangitsa kuti zikhale zofunikira kwambiri zopangira zokutira.
Pali njira zosiyanasiyana zokonzekeraZovala za SiC, kuphatikizapo sol-gel, embedding, brushing, plasma spraying, chemical vapor reaction (CVR), ndi chemical vapor deposition (CVD).
Zina mwa izi, njira yophatikizira ndi njira yotentha kwambiri yolimba-gawo lotentha. Poyika gawo lapansi la graphite mu ufa wophatikizira womwe uli ndi Si ndi C ufa ndikulowa m'malo a mpweya wopanda mpweya, mawonekedwe opaka a SiC pagawo la graphite. Njirayi ndi yophweka, ndipo zokutira zimagwirizana bwino ndi gawo lapansi. Komabe, zokutira sizikhala ndi makulidwe ofanana ndipo zimatha kukhala ndi pores, zomwe zimapangitsa kuti ma oxidation asakane.
Njira Yopaka Yopopera
Njira yokutira yopopera imaphatikizapo kupopera zinthu zamadzimadzi pamtunda wa graphite ndikuwachiritsa pa kutentha kwina kuti apange zokutira. Njirayi ndi yophweka komanso yotsika mtengo koma imapangitsa kuti pakhale mgwirizano wofooka pakati pa zokutira ndi gawo lapansi, kusakanikirana kosauka, ndi zokutira zopyapyala zokhala ndi kutsika kwa okosijeni, zomwe zimafuna njira zothandizira.
Ion Beam Kupopera Njira
Kupopera mbewu kwa ion mtengo kumagwiritsa ntchito mfuti ya ayoni kupopera zinthu zosungunuka kapena kusungunuka pang'ono pamtunda wa graphite, ndikupanga zokutira pakulimba. Njirayi ndi yophweka ndipo imapanga zokutira wandiweyani wa SiC. Komabe, zokutira zoonda zimakhala ndi kukana kwa okosijeni kofooka, komwe nthawi zambiri zimagwiritsidwa ntchito popangira zokutira za SiC kuti zikhale zabwino.
Njira ya Sol-gel
Njira ya sol-gel imaphatikizapo kukonzekera yunifolomu, njira yowonekera ya sol, kuphimba gawo lapansi, ndikupeza zokutira pambuyo poyanika ndi kuyanika. Njirayi ndi yosavuta komanso yotsika mtengo koma imapangitsa kuti zokutira zokhala ndi kutsika kwamphamvu kwamafuta komanso kutha kusweka, kuletsa kufalikira kwake.
Chemical Vapor Reaction (CVR)
CVR imagwiritsa ntchito ufa wa Si ndi SiO2 pa kutentha kwakukulu kuti ipange mpweya wa SiO, womwe umakhudzidwa ndi gawo lapansi la carbon kuti likhale ndi zokutira za SiC. Zomwe zimapangidwira za SiC zomangira zimamangiriza mwamphamvu ndi gawo lapansi, koma njirayi imafunikira kutentha kwambiri komanso mtengo wake.
Chemical Vapor Deposition (CVD)
CVD ndiye njira yoyamba yokonzekera zokutira za SiC. Zimakhudza momwe mpweya umayendera pamtunda wa graphite, pomwe zopangira zimakumana ndi zochitika zakuthupi ndi zamankhwala, zomwe zimayikidwa ngati zokutira za SiC. CVD imapanga zokutira zomangika za SiC zomwe zimawonjezera makutidwe ndi okosijeni a gawo lapansi komanso kukana kutulutsa. Komabe, CVD imakhala ndi nthawi yayitali yoyika ndipo imatha kukhala ndi mpweya wapoizoni.
Mkhalidwe Wamsika
Pamsika wa SiC-wokutidwa ndi graphite susceptor, opanga akunja ali ndi chiwongolero chachikulu komanso msika wamsika. Semicera yagonjetsa matekinoloje apamwamba a kukula kwa yunifolomu ya SiC pazitsulo za graphite, kupereka njira zothetsera kutentha kwa matenthedwe, modulus zotanuka, kuuma, kupunduka kwa lattice, ndi zina zabwino, kukwaniritsa zofunikira za zipangizo za MOCVD.
Future Outlook
Makampani a semiconductor aku China akukula mwachangu, ndikuchulukirachulukira kwa zida za MOCVD epitaxial ndikukulitsa ntchito. Msika wa SiC-wokutidwa ndi graphite susceptor ukuyembekezeka kukula mwachangu.
Mapeto
Monga gawo lofunikira pazida zopangira semiconductor, kudziwa luso lazopangapanga komanso zoyatsira ma graphite zokutira za SiC ndizofunikira kwambiri pamakampani aku China opangira ma semiconductor. Gawo lanyumba la SiC-lokutidwa ndi graphite susceptor likuyenda bwino, ndipo zogulitsa zafika padziko lonse lapansi.Semiceraakuyesetsa kukhala wogulitsa wamkulu pantchito iyi.
Nthawi yotumiza: Jul-17-2024