Utumiki Wautali Wautumiki wa SiC Wopaka Graphite Chonyamulira cha Solar Wafer

Utumiki Wautali Wautumiki wa SiC Wokhala Ndi Graphite Chonyamulira cha Solar Wafer Yowonetsedwa

Kufotokozera Kwachidule:

Silicon carbide ndi mtundu watsopano wama ceramic omwe ali ndi mtengo wokwera komanso zinthu zabwino kwambiri.Chifukwa cha mawonekedwe monga mphamvu yayikulu komanso kuuma, kukana kutentha kwambiri, kutenthetsa kwakukulu komanso kukana kwa dzimbiri, Silicon Carbide imatha kupirira pafupifupi mitundu yonse yamankhwala.Chifukwa chake, SiC imagwiritsidwa ntchito kwambiri mumigodi yamafuta, mankhwala, makina ndi airspace, ngakhale mphamvu zanyukiliya ndi asitikali ali ndi zofuna zawo zapadera pa SIC.Ntchito zina zomwe titha kupereka ndi mphete zosindikizira za mpope, valavu ndi zida zoteteza etc.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Ubwino wake

Kutentha kwakukulu kwa okosijeni kukana
Zabwino kwambiri Corrosion resistance
Good Abrasion resistance
High coefficient of conductivity kutentha
Kudzipangira mafuta, kutsika kochepa
Kuuma kwakukulu
Mapangidwe mwamakonda.

Mapulogalamu

-Munda wosamva kuvala: ming'alu, mbale, mphuno ya mchenga, mbiya yamkuntho, mbiya yopera, etc ...
-High Temperature Field: siC Slab, Kuzimitsa Furnace Tube, Radiant Tube, crucible, Heating Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC boti, Kiln Car Structure, Setter, etc.
-Silicon Carbide Semiconductor: SiC wafer bwato, sic chuck, sic paddle, sic cassette, sic diffusion chubu, wafer foloko, mbale kuyamwa, kanjira, etc.
-Silicon Carbide Seal Field: mitundu yonse ya mphete zosindikizira, kubala, tchire, etc.
-Munda wa Photovoltaic: Cantilever Paddle, Mgolo Wopera, Silicon Carbide Roller, etc.
- Lithium Battery Field

MOPANDA (1)

MOPANDA (2)

Mawonekedwe a SiC

Katundu	Mtengo	Njira
Kuchulukana	3.21g/cc	Sink-float ndi dimension
Kutentha kwenikweni	0.66 J/g °K	Kuwala kwa laser pulsed
Flexural mphamvu	450 MPa 560 MPa	4 point bend, RT4 point bend, 1300°
Kulimba kwa fracture	2.94 MPa m1/2	Microindentation
Kuuma	2800	Vicker, 500g katundu
Elastic ModulusYoung's Modulus	450 GPA430 GPA	4 pt bend, RT4 pt bend, 1300 °C
Kukula kwambewu	2 - 10 μm	Mtengo wa SEM

Thermal Properties of SiC

Thermal Conductivity	250 W/m °K	Njira ya laser flash, RT
Kukula kwa Thermal (CTE)	4.5 x 10-6 °K	Kutentha kwachipinda mpaka 950 ° C, silika dilatometer

Technical Parameters

Kanthu	Chigawo	Zambiri
Kanthu	Chigawo	RBSiC(SiSiC)	NBSiC	SSiC	Mtengo wa RSiC	OSiC
Zinthu za SiC	%	85	75	99	99.9	≥99
Zaulere za silicon	%	15	0	0	0	0
Kutentha kwakukulu kwa utumiki	℃	1380	1450	1650	1620	1400
Kuchulukana	g/cm³	3.02	2.75-2.85	3.08-3.16	2.65-2.75	2.75-2.85
Open porosity	%	0	13-15	0	15-18	7-8
Mphamvu yopindika 20 ℃	Mpa	250	160	380	100	/
Mphamvu yopindika 1200 ℃	Mpa	280	180	400	120	/
Modulus ya elasticity 20 ℃	Gpa	330	580	420	240	/
Modulus ya elasticity 1200 ℃	Gpa	300	/	/	200	/
Thermal conductivity 1200 ℃	W/mK	45	19.6	100-120	36.6	/
Coefficient ya kukula kwa kutentha	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

The CVD silicon carbide ❖ kuyanika pamwamba pa recrystallized pakachitsulo carbide ceramic mankhwala akhoza kufika chiyero choposa 99.9999% kukwaniritsa zosowa za makasitomala mu makampani semiconductor.