LiNbO3 Bonding mkate

Kufotokozera Kwachidule:

Lithium niobate crystal ili ndi ma electro-optical, acousto-optical, piezoelectric, ndi zinthu zopanda mzere. Lithium niobate crystal ndi kristalo wofunikira wochita ntchito zambiri wokhala ndi mawonekedwe abwino osawoneka bwino komanso mawonekedwe akulu osawoneka bwino; imathanso kukwaniritsa gawo lofananira. Monga electro-optical crystal, yakhala ikugwiritsidwa ntchito ngati chinthu chofunika kwambiri cha optical waveguide; monga kristalo wa piezoelectric, angagwiritsidwe ntchito popanga zosefera zapakatikati ndi zotsika pafupipafupi za SAW, ma transducers amphamvu kwambiri otenthetsera akupanga, etc. Doped lithiamu niobate materials amagwiritsidwanso ntchito kwambiri.

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Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Semicera's LiNbO3 Bonding Wafer idapangidwa kuti ikwaniritse zofunika kwambiri pakupanga zida zapamwamba za semiconductor. Ndi mawonekedwe ake apadera, kuphatikiza kukana kuvala kwapamwamba, kukhazikika kwamafuta ambiri, komanso chiyero chapadera, chophatikizika ichi ndi choyenera kugwiritsidwa ntchito pamapulogalamu omwe amafunikira kulondola komanso kokhalitsa.

M'makampani a semiconductor, LiNbO3 Bonding Wafers amagwiritsidwa ntchito pomanga zigawo zoonda mu zida za optoelectronic, masensa, ndi ma IC apamwamba. Iwo amayamikiridwa makamaka mu photonics ndi MEMS (Micro-Electromechanical Systems) chifukwa cha mphamvu zawo za dielectric zabwino kwambiri komanso kutha kupirira zovuta zogwirira ntchito. Semicera's LiNbO3 Bonding Wafer idapangidwa kuti izithandizira kulumikizana kolondola, kupititsa patsogolo magwiridwe antchito komanso kudalirika kwa zida za semiconductor.

Thermal ndi magetsi katundu wa LiNbO3
Malo osungunuka	1250 ℃
Curie kutentha	1140 ℃
Thermal conductivity	38 W/m/K @ 25 ℃
Kuchuluka kwa kutentha kwapakati (@ 25°C)	//a, 2.0×10^-6/K //c, 2.2 × 10^-6/K
Kukaniza	2 × 10 pa^-6Ω·cm @ 200 ℃
Dielectric nthawi zonse	εS11/ε0=43, εT11/ε0=78 εS33/ε0=28, εT33/ε0= 2
Piezoelectric nthawi zonse	D₂₂=2.04×10^-11C/N D₃₃=19.22×10^-11C/N
Electro-optic coefficient	γT₃₃= 32 pm/V, γS₃₃= 31 pm/V, γT₃₁=10pm/V, γS₃₁=8.6pm/V, γT₂₂= 6.8 pm/V, γS₂₂= 3.4 pm/V,
Half-wave voltage, DC Munda wamagetsi // z, kuwala ⊥ Z; Malo amagetsi // x kapena y, kuwala ⊥ z	3.03 KV 4.02 KV

Wopangidwa pogwiritsa ntchito zida zapamwamba kwambiri, LiNbO3 Bonding Wafer imatsimikizira kudalirika kosasinthika ngakhale pazovuta kwambiri. Kukhazikika kwa kutentha kwake kumapangitsa kuti ikhale yoyenera makamaka kwa malo omwe amatentha kwambiri, monga omwe amapezeka mu semiconductor epitaxy process. Kuphatikiza apo, kuyeretsedwa kwakukulu kwa chophikacho kumatsimikizira kuipitsidwa pang'ono, ndikupangitsa kukhala chisankho chodalirika pamapulogalamu ofunikira a semiconductor.

Ku Semicera, tadzipereka kupereka mayankho otsogola pamakampani. LiNbO3 Bonding Wafer yathu imapereka kulimba kosayerekezeka komanso kuthekera kochita bwino kwambiri pamapulogalamu omwe amafunikira kuyera kwambiri, kukana kuvala, komanso kukhazikika kwamafuta. Kaya ndi yopanga zida zapamwamba za semiconductor kapena matekinoloje ena apadera, chophikachi chimakhala ngati gawo lofunikira popanga zida zamakono.