Silicon Carbide SiC Coated Epitaxial Reactor Barrel

Silicon Carbide SiC Yokutidwa ndi Epitaxial Reactor Barrel Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Semicera imapereka mitundu yambiri ya susceptors ndi zigawo za graphite zomwe zimapangidwira ma epitaxy reactors osiyanasiyana.

Kupyolera mu mgwirizano wamakina ndi ma OEM otsogola m'makampani, ukadaulo wazinthu zambiri, komanso luso lapamwamba lopanga, Semicera imapereka mapangidwe ogwirizana kuti akwaniritse zomwe mukufuna. Kudzipereka kwathu pakuchita bwino kumatsimikizira kuti mumalandira mayankho oyenera pazosowa zanu za epitaxy reactor.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Kampani yathu imaperekaKupaka kwa SiCntchito ntchito padziko graphite, zoumba ndi zipangizo zina ndi CVD njira, kotero kuti mpweya wapadera munali mpweya ndi pakachitsulo akhoza kuchita pa kutentha kwambiri kupeza mkulu-chiyero Sic mamolekyu, amene waikidwa pamwamba pa zinthu TACHIMATA kuti apangeChitetezo cha SiCkwa mtundu wa epitaxy barrel hy pnotic.

Zofunikira zazikulu:

1 .High chiyero SiC TACHIMATA graphite

2. Kutentha kwapamwamba kwambiri & kufanana kwamafuta

3. ChabwinoSiC crystal yokutidwakwa malo osalala

4. High durability motsutsana mankhwala kuyeretsa

Zofunikira Zazikulu zaKupaka kwa CVD-SIC

SiC-CVD Properties
Kapangidwe ka Crystal	FCC β gawo
Kuchulukana	g/cm³	3.21
Kuuma	Vickers kuuma	2500
Ukulu wa Mbewu	μm	2-10
Chemical Purity	%	99.99995
Kutentha Mphamvu	J·kg-1 ·K-1	640
Kutentha kwa Sublimation	℃	2700
Felexural Mphamvu	MPa (RT 4-point)	415
Young's Modulus	Gpa (4pt bend, 1300 ℃)	430
Kukula kwa Thermal (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300