Semicera High PuritySilicon Carbide Paddleidapangidwa mwaluso kuti ikwaniritse zofunikira zamasiku ano opanga semiconductor. IziSiC Cantilever Paddleimapambana m'malo otentha kwambiri, yopatsa kukhazikika kwamafuta osayerekezeka komanso kukhazikika kwamakina. Mapangidwe a SiC Cantilever amapangidwa kuti athe kupirira mikhalidwe yovuta kwambiri, kuwonetsetsa kuti mawafa odalirika akugwira ntchito m'njira zosiyanasiyana.
Chimodzi mwazofunikira kwambiri zaSiC Paddlendi kapangidwe kake kopepuka koma kolimba, komwe kamalola kuphatikizika kosavuta ndi machitidwe omwe alipo. Kutentha kwake kwakukulu kumathandizira kukhalabe okhazikika pamigawo yovuta monga etching ndi kuika, kuchepetsa chiopsezo cha kuwonongeka kwa wafer ndikuwonetsetsa zokolola zambiri. Kugwiritsiridwa ntchito kwa silicon carbide yolimba kwambiri pomanga paddle kumawonjezera kukana kwake kuti isagwe ndi kung'ambika, kupereka moyo wautali wogwira ntchito ndikuchepetsa kufunika kosintha pafupipafupi.
Semicera imatsindika kwambiri za zatsopano, kupereka aSiC Cantilever Paddlezomwe sizimangokwaniritsa komanso kupitilira miyezo yamakampani. Palada iyi imakonzedwa kuti igwiritsidwe ntchito pamitundu yosiyanasiyana ya semiconductor, kuyambira pakuyika mpaka kuyika, komwe kulondola komanso kudalirika ndikofunikira. Pophatikiza ukadaulo wotsogola uwu, opanga amatha kuyembekezera kuwongolera bwino, kutsika mtengo wokonza, komanso kusasinthika kwazinthu.
Zakuthupi za Recrystallized Silicon Carbide | |
Katundu | Mtengo Wodziwika |
Kutentha kogwira ntchito (°C) | 1600 ° C (ndi mpweya), 1700 ° C (kuchepetsa chilengedwe) |
Zinthu za SiC | 99.96% |
Zaulere za Si | <0.1% |
Kuchulukana kwakukulu | 2.60-2.70 g / masentimita3 |
Zowoneka porosity | < 16% |
Kupanikizika kwamphamvu | > 600 MPa |
Kuzizira kopinda mphamvu | 80-90 MPa (20°C) |
Mphamvu yopindika yotentha | 90-100 MPa (1400°C) |
Kukula kwa kutentha pa 1500°C | 4.70 10-6/°C |
Thermal conductivity @ 1200 ° C | 23 W/m•K |
Elastic moduli | 240 GPA |
Thermal shock resistance | Zabwino kwambiri |