GaN Epitaxy

Kufotokozera Kwachidule:

GaN Epitaxy ndi mwala wapangodya popanga zida zapamwamba za semiconductor, zomwe zimapereka mphamvu zapadera, kukhazikika kwamafuta, komanso kudalirika. Mayankho a Semicera a GaN Epitaxy amapangidwa kuti akwaniritse zofunikira zamapulogalamu apamwamba, kuwonetsetsa kuti ndipamwamba komanso kusasinthika pagawo lililonse.


Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Semiceramonyadira akupereka tsogolo lakeGaN Epitaxyservices, opangidwa kuti akwaniritse zosowa zomwe zikuchitika nthawi zonse zamakampani a semiconductor. Gallium nitride (GaN) ndi chinthu chomwe chimadziwika ndi zinthu zake zapadera, ndipo njira zathu zakukula kwa epitaxial zimatsimikizira kuti zopindulitsa izi zimakwaniritsidwa bwino pazida zanu.

Zigawo Zapamwamba za GaN Semiceraimagwira ntchito yopanga zapamwamba kwambiriGaN Epitaxyzigawo, zopatsa chiyero chakuthupi chosayerekezeka ndi kukhulupirika kwapangidwe. Zigawozi ndizofunika kwambiri pazogwiritsa ntchito zosiyanasiyana, kuchokera kumagetsi amagetsi kupita ku optoelectronics, komwe magwiridwe antchito apamwamba komanso kudalirika ndikofunikira. Njira zathu zokulirapo zolondola zimatsimikizira kuti gawo lililonse la GaN likukwaniritsa miyezo yoyenera pazida zotsogola.

Wokometsedwa kwa MwachanguTheGaN Epitaxyzoperekedwa ndi Semicera zimapangidwira kuti zithandizire magwiridwe antchito amagetsi anu. Popereka magawo otsika, oyeretsa kwambiri a GaN, timathandizira zida kuti zizigwira ntchito pama frequency apamwamba komanso ma voltages, ndikuchepa kwa mphamvu. Kukhathamiritsa kumeneku ndikofunikira pamapulogalamu monga ma electron-mobility transistors (HEMTs) ndi ma light-emitting diode (ma LED), pomwe kuchita bwino ndikofunikira.

Zosiyanasiyana Kugwiritsa Ntchito Semicera'sGaN Epitaxyndi yosunthika, yothandiza kumakampani osiyanasiyana ndi ntchito. Kaya mukupanga zokulitsa mphamvu, zida za RF, kapena ma laser diode, zigawo zathu za GaN epitaxial zimapereka maziko ofunikira pazida zogwira ntchito kwambiri, zodalirika. Njira yathu imatha kukonzedwa kuti ikwaniritse zofunikira zenizeni, kuwonetsetsa kuti malonda anu amapeza zotsatira zabwino.

Kudzipereka ku QualityQuality ndiye mwala wapangodya waSemicera's approach toGaN Epitaxy. Timagwiritsa ntchito matekinoloje apamwamba a epitaxial ndi njira zowongolera zowongolera kuti tipange zigawo za GaN zomwe zimawonetsa kufananiza, kusasunthika kochepa, komanso zinthu zapamwamba kwambiri. Kudzipereka kumeneku pazabwino kumatsimikizira kuti zida zanu sizimangokwaniritsa komanso kupitilira miyezo yamakampani.

Njira Zatsopano za Kukula Semiceraali patsogolo pazatsopano m'munda waGaN Epitaxy. Gulu lathu limafufuza mosalekeza njira ndi matekinoloje atsopano kuti apititse patsogolo kukula, ndikupereka zigawo za GaN zokhala ndi mphamvu zowonjezera zamagetsi ndi kutentha. Zatsopanozi zimamasulira kukhala zida zogwira ntchito bwino, zomwe zimatha kukwaniritsa zofunikira za m'badwo wotsatira.

Mayankho Osinthidwa Mwamakonda Pama projekiti AnuPozindikira kuti polojekiti iliyonse ili ndi zofunikira zake,Semiceraamapereka makondaGaN Epitaxyzothetsera. Kaya mukufuna mbiri yeniyeni ya doping, makulidwe osanjikiza, kapena zomaliza zapamtunda, timagwira ntchito limodzi nanu kuti mupange njira yomwe imakwaniritsa zosowa zanu zenizeni. Cholinga chathu ndikukupatsani zigawo za GaN zomwe zidapangidwa ndendende kuti zithandizire magwiridwe antchito ndi kudalirika kwa chipangizo chanu.

Zinthu

Kupanga

Kafukufuku

Dummy

Crystal Parameters

Polytype

4H

Kulakwitsa koyang'ana pamwamba

<11-20>4±0.15°

Magetsi Parameters

Dopant

n-mtundu wa Nayitrogeni

Kukaniza

0.015-0.025ohm · masentimita

Mechanical Parameters

Diameter

150.0 ± 0.2mm

Makulidwe

350±25 μm

Choyambira chapansi pamayendedwe

[1-100] ± 5°

Kutalika kosalala koyambirira

47.5 ± 1.5mm

Sekondale flat

Palibe

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Kugwada

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Kapangidwe

Kuchuluka kwa Micropipe

<1 pa/cm2

<10 pa/cm2

<15 pa/cm2

Zitsulo zonyansa

≤5E10 maatomu/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 pa/cm2

≤1000 E/cm2

NA

Front Quality

Patsogolo

Si

Kumaliza pamwamba

Si-nkhope CMP

Tinthu ting'onoting'ono

≤60ea/wafer (kukula ≥0.3μm)

NA

Zokanda

≤5ea/mm. Kutalika kwake ≤Diameter

Kutalika kokwanira≤2 * Diameter

NA

Peel/maenje/madontho/mikwingwirima/ ming'alu/kuipitsidwa

Palibe

NA

M'mphepete tchipisi / indents / fracture / hex mbale

Palibe

Magawo a polytype

Palibe

Malo owonjezera≤20%

Malo owonjezera ≤30%

Chizindikiro cha laser chakutsogolo

Palibe

Back Quality

Kumbuyo komaliza

C-nkhope CMP

Zokanda

≤5ea/mm,Cumulative kutalika≤2*Diameter

NA

Zowonongeka zam'mbuyo (zolowera m'mphepete / ma indents)

Palibe

Msana roughness

Ra≤0.2nm (5μm*5μm)

Chizindikiro cha laser kumbuyo

1 mm (kuchokera m'mphepete)

M'mphepete

M'mphepete

Chamfer

Kupaka

Kupaka

Epi-okonzeka ndi zoyika vacuum

Kupaka makaseti amitundu yambiri

*Zindikirani: "NA" zikutanthauza kuti palibe pempho Zinthu zomwe sizinatchulidwe zingatanthauze SEMI-STD.

tech_1_2_size
Zophika za SiC

  • Zam'mbuyo:
  • Ena: