Semiceramonyadira amaperekaGa2O3Epitaxy, njira yamakono yopangidwira kukankhira malire a mphamvu zamagetsi ndi optoelectronics. Ukadaulo wapamwamba wa epitaxial umathandizira mawonekedwe apadera a Gallium Oxide (Ga2O3) kuti apereke magwiridwe antchito apamwamba pamapulogalamu ofunikira.
Zofunika Kwambiri:
• Wapadera Wide Bandgap: Ga2O3Epitaxyimakhala ndi bandgap yotalikirapo kwambiri, yomwe imalola kuti ma voltages awonongeke kwambiri komanso kugwira ntchito moyenera m'malo okhala ndi mphamvu zambiri.
•High Thermal Conductivity: Epitaxial wosanjikiza amapereka matenthedwe matenthedwe abwino kwambiri, kuonetsetsa kuti ntchito yokhazikika ngakhale pansi pa kutentha kwapamwamba, kuti ikhale yabwino kwa zipangizo zamakono.
•Ubwino Wazinthu Zapamwamba: Pezani kristalo wapamwamba kwambiri wokhala ndi zolakwika zochepa, kuwonetsetsa kuti chipangizocho chikugwira ntchito bwino komanso moyo wautali, makamaka pamapulogalamu ovuta monga ma transistors amagetsi ndi zowunikira za UV.
•Kusinthasintha mu Mapulogalamu: Zokwanira bwino pamagetsi amagetsi, ntchito za RF, ndi ma optoelectronics, zomwe zimapereka maziko odalirika a zida zam'tsogolo za semiconductor.
Dziwani kuthekera kwaGa2O3Epitaxyndi mayankho a Semicera. Zogulitsa zathu za epitaxial zidapangidwa kuti zikwaniritse miyezo yapamwamba kwambiri komanso magwiridwe antchito, zomwe zimapangitsa kuti zida zanu zizigwira ntchito moyenera komanso modalirika. Sankhani Semicera paukadaulo wotsogola wa semiconductor.
| Zinthu | Kupanga | Kafukufuku | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kulakwitsa koyang'ana pamwamba | <11-20>4±0.15° | ||
| Magetsi Parameters | |||
| Dopant | n-mtundu wa Nayitrogeni | ||
| Kukaniza | 0.015-0.025ohm · masentimita | ||
| Mechanical Parameters | |||
| Diameter | 150.0 ± 0.2mm | ||
| Makulidwe | 350±25 μm | ||
| Choyambira chapansi pamayendedwe | [1-100] ± 5° | ||
| Kutalika kosalala koyambirira | 47.5 ± 1.5mm | ||
| Sekondale flat | Palibe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kugwada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Kapangidwe | |||
| Kuchuluka kwa Micropipe | <1 pa/cm2 | <10 pa/cm2 | <15 pa/cm2 |
| Zitsulo zonyansa | ≤5E10 maatomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 pa/cm2 | ≤1000 E/cm2 | NA |
| Front Quality | |||
| Patsogolo | Si | ||
| Kumaliza pamwamba | Si-nkhope CMP | ||
| Tinthu ting'onoting'ono | ≤60ea/wafer (kukula ≥0.3μm) | NA | |
| Zokanda | ≤5ea/mm. Kutalika kwake ≤Diameter | Kutalika kokwanira≤2 * Diameter | NA |
| Peel/maenje/madontho/mikwingwirima/ ming'alu/kuipitsidwa | Palibe | NA | |
| M'mphepete tchipisi / indents / fracture / hex mbale | Palibe | ||
| Magawo a polytype | Palibe | Malo owonjezera≤20% | Malo owonjezera ≤30% |
| Chizindikiro cha laser chakutsogolo | Palibe | ||
| Back Quality | |||
| Kumbuyo komaliza | C-nkhope CMP | ||
| Zokanda | ≤5ea/mm,Cumulative kutalika≤2*Diameter | NA | |
| Zowonongeka zam'mbuyo (zolowera m'mphepete / ma indents) | Palibe | ||
| Msana roughness | Ra≤0.2nm (5μm*5μm) | ||
| Chizindikiro cha laser kumbuyo | 1 mm (kuchokera m'mphepete) | ||
| M'mphepete | |||
| M'mphepete | Chamfer | ||
| Kupaka | |||
| Kupaka | Epi-okonzeka ndi zoyika vacuum Kupaka makaseti amitundu yambiri | ||
| *Zindikirani: "NA" zikutanthauza kuti palibe pempho Zinthu zomwe sizinatchulidwe zingatanthauze SEMI-STD. | |||
