Semiceraimatchula za850V High Mphamvu GaN-on-Si Epi Wafer, kupambana mu luso la semiconductor. Epi wafer yapamwambayi imaphatikiza mphamvu ya Gallium Nitride (GaN) ndi mtengo wamtengo wapatali wa Silicon (Si), kupanga njira yothetsera mphamvu yamagetsi apamwamba.
Zofunika Kwambiri:
•High Voltage Kusamalira: Wopangidwa kuti azithandizira mpaka 850V, GaN-on-Si Epi Wafer iyi ndiyabwino pakufunafuna zamagetsi zamagetsi, zomwe zimapangitsa kuti zitheke komanso magwiridwe antchito apamwamba.
•Kachulukidwe Wamphamvu: Ndi kayendedwe kabwino ka ma elekitironi ndi kutenthetsa kwa kutentha, teknoloji ya GaN imalola kuti pakhale mapangidwe ang'onoang'ono komanso kuwonjezeka kwa mphamvu.
•Yankho Losavuta: Pogwiritsa ntchito silicon ngati gawo lapansi, epi wafer iyi imapereka njira yotsika mtengo yofananira ndi zowotcha zachikhalidwe za GaN, popanda kusokoneza mtundu kapena magwiridwe antchito.
•Wide Application Range: Zokwanira kuti zigwiritsidwe ntchito posinthira mphamvu, ma amplifiers a RF, ndi zida zina zamagetsi zamagetsi, kuwonetsetsa kudalirika komanso kulimba.
Onani tsogolo laukadaulo wamagetsi okwera kwambiri ndi Semicera's850V High Mphamvu GaN-on-Si Epi Wafer. Zopangidwira ntchito zapamwamba, izi zimatsimikizira kuti zida zanu zamagetsi zimagwira ntchito bwino komanso zodalirika. Sankhani Semicera pazosowa zanu zam'badwo wotsatira.
| Zinthu | Kupanga | Kafukufuku | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kulakwitsa koyang'ana pamwamba | <11-20>4±0.15° | ||
| Magetsi Parameters | |||
| Dopant | n-mtundu wa Nayitrogeni | ||
| Kukaniza | 0.015-0.025ohm · masentimita | ||
| Mechanical Parameters | |||
| Diameter | 150.0 ± 0.2mm | ||
| Makulidwe | 350±25 μm | ||
| Choyambira chapansi pamayendedwe | [1-100] ± 5° | ||
| Kutalika kosalala koyambirira | 47.5 ± 1.5mm | ||
| Sekondale flat | Palibe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kugwada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Kapangidwe | |||
| Kuchuluka kwa Micropipe | <1 pa/cm2 | <10 pa/cm2 | <15 pa/cm2 |
| Zitsulo zonyansa | ≤5E10 maatomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 pa/cm2 | ≤1000 E/cm2 | NA |
| Front Quality | |||
| Patsogolo | Si | ||
| Kumaliza pamwamba | Si-nkhope CMP | ||
| Tinthu ting'onoting'ono | ≤60ea/wafer (kukula ≥0.3μm) | NA | |
| Zokanda | ≤5ea/mm. Kutalika kwake ≤Diameter | Kutalika kokwanira≤2 * Diameter | NA |
| Peel/maenje/madontho/mikwingwirima/ ming'alu/kuipitsidwa | Palibe | NA | |
| M'mphepete tchipisi / indents / fracture / hex mbale | Palibe | ||
| Magawo a polytype | Palibe | Malo owonjezera≤20% | Malo owonjezera ≤30% |
| Chizindikiro cha laser chakutsogolo | Palibe | ||
| Back Quality | |||
| Kumbuyo komaliza | C-nkhope CMP | ||
| Zokanda | ≤5ea/mm,Cumulative kutalika≤2*Diameter | NA | |
| Zowonongeka zam'mbuyo (zolowera m'mphepete / ma indents) | Palibe | ||
| Msana roughness | Ra≤0.2nm (5μm*5μm) | ||
| Chizindikiro cha laser kumbuyo | 1 mm (kuchokera m'mphepete) | ||
| M'mphepete | |||
| M'mphepete | Chamfer | ||
| Kupaka | |||
| Kupaka | Epi-okonzeka ndi zoyika vacuum Kupaka makaseti amitundu yambiri | ||
| *Zindikirani: "NA" zikutanthauza kuti palibe pempho Zinthu zomwe sizinatchulidwe zingatanthauze SEMI-STD. | |||
