6-inch LiNbO3 Bonding wafer

6-inchi LiNbO3 Bonding wafer Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Semicera's 6-inch LiNbO3 chophatikizika chomangika ndi choyenera pamakina apamwamba omangirira mu zida za optoelectronic, MEMS, ndi ma circuits ophatikizika (ICs). Ndi mawonekedwe ake apamwamba omangirira, ndi abwino kuti akwaniritse kusanjika kolondola komanso kuphatikiza, kuwonetsetsa kuti zida za semiconductor zimagwira ntchito bwino komanso moyenera. Kuyeretsedwa kwakukulu kwa chophatikiziracho kumachepetsa kuipitsidwa, kumapangitsa kukhala chisankho chodalirika pamapulogalamu omwe amafunikira kulondola kwambiri.

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Semicera's 6-inch LiNbO3 Bonding Wafer idapangidwa kuti ikwaniritse miyezo yolimba yamakampani a semiconductor, ndikupereka magwiridwe antchito osayerekezeka m'malo onse ofufuza ndi kupanga. Kaya ndi ma optoelectronics apamwamba kwambiri, MEMS, kapena ma semiconductor apamwamba, chowotcha chomangirachi chimapereka kudalirika komanso kulimba kofunikira pakukula kwaukadaulo wapamwamba.

M'makampani a semiconductor, 6-inch LiNbO3 Bonding Wafer imagwiritsidwa ntchito kwambiri polumikiza zigawo zoonda mu zida za optoelectronic, masensa, ndi ma microelectromechanical systems (MEMS). Kapangidwe kake kapadera kamapangitsa kuti ikhale gawo lofunika kwambiri pamapulogalamu omwe amafunikira kusanjika kolondola, monga kupanga mabwalo ophatikizika (ICs) ndi zida zamafoto. Kuyeretsedwa kwakukulu kwa chophatikizira kumatsimikizira kuti chomalizacho chimakhala ndi ntchito yabwino, kuchepetsa chiopsezo cha kuipitsidwa komwe kungakhudze kudalirika kwa chipangizo.

Thermal ndi magetsi katundu wa LiNbO3
Malo osungunuka	1250 ℃
Curie kutentha	1140 ℃
Thermal conductivity	38 W/m/K @ 25 ℃
Kuchuluka kwa kutentha kwapakati (@ 25°C)	//a, 2.0×10^-6/K //c, 2.2 × 10^-6/K
Kukaniza	2 × 10 pa^-6Ω·cm @ 200 ℃
Dielectric nthawi zonse	εS11/ε0=43, εT11/ε0=78 εS33/ε0=28, εT33/ε0= 2
Piezoelectric nthawi zonse	D₂₂=2.04×10^-11C/N D₃₃=19.22×10^-11C/N
Electro-optic coefficient	γT₃₃= 32 pm/V, γS₃₃= 31 pm/V, γT₃₁=10pm/V, γS₃₁=8.6pm/V, γT₂₂= 6.8 pm/V, γS₂₂= 3.4 pm/V,
Half-wave voltage, DC Munda wamagetsi // z, kuwala ⊥ Z; Malo amagetsi // x kapena y, kuwala ⊥ z	3.03 KV 4.02 KV

6-inch LiNbO3 Bonding Wafer yochokera ku Semicera idapangidwa makamaka kuti igwiritsidwe ntchito m'mafakitale a semiconductor ndi optoelectronics. Wodziwika bwino chifukwa chokana kuvala bwino, kukhazikika kwamafuta ambiri, komanso chiyero chapadera, chophatikizira chomangirira ichi ndi chabwino kwambiri popanga zida za semiconductor zapamwamba, zomwe zimapereka kudalirika kwanthawi yayitali komanso kulondola ngakhale pazovuta.

Wopangidwa ndi ukadaulo wotsogola, 6-inch LiNbO3 Bonding Wafer imatsimikizira kuipitsidwa kochepa, komwe kuli kofunikira pakupanga ma semiconductor omwe amafunikira chiyero chokwera. Kukhazikika kwake kwamatenthedwe kumapangitsa kuti izitha kupirira kutentha kwapamwamba popanda kusokoneza kukhulupirika kwadongosolo, ndikupangitsa kuti ikhale chisankho chodalirika pakugwiritsa ntchito kutentha kwambiri. Kuphatikiza apo, kulimba kwamphamvu kwa wafer kumatsimikizira kuti imagwira ntchito nthawi yayitali, kumapangitsa kuti ikhale yolimba komanso kuchepetsa kufunika kosintha pafupipafupi.