1.ZaSilicon Carbide (SiC) Epitaxial Wafers
Silicon Carbide (SiC) epitaxial wafers amapangidwa poyika kristalo umodzi wosanjikiza pa chowotcha pogwiritsa ntchito silicon carbide single crystal wafer ngati gawo lapansi, nthawi zambiri ndi chemical vapor deposition (CVD). Pakati pawo, silicon carbide epitaxial imakonzedwa ndikukulitsa silicon carbide epitaxial layer pa conductive silicon carbide substrate, ndikupangidwanso kukhala zida zogwira ntchito kwambiri.
2.Silicon Carbide Epitaxial WaferZofotokozera
Titha kupereka 4, 6, 8 mainchesi N-mtundu 4H-SiC epitaxial wafers. Epitaxial wafer ili ndi bandwidth yayikulu, kuthamanga kwambiri kwa ma elekitironi oyendetsa, kuthamanga kwambiri kwa ma elekitironi amitundu iwiri, komanso mphamvu yamunda yosweka kwambiri. Zinthu izi zimapangitsa chipangizochi kukhala chokwera kutentha kwambiri, kukana kwamagetsi, kuthamanga kwachangu, kutsika kwapang'onopang'ono, kukula kochepa komanso kulemera kochepa.
3. SiC Epitaxial Applications
SiC epitaxial waferamagwiritsidwa ntchito makamaka mu Schottky diode (SBD), metal oxide semiconductor field effect transistor (MOSFET) junction field effect transistor (JFET), bipolar junction transistor (BJT), thyristor (SCR), insulated gate bipolar transistor (IGBT), yomwe imagwiritsidwa ntchito. m'minda ya low-voltage, medium-voltage ndi high-voltage. Panopa,SiC epitaxial waferskwa magetsi okwera kwambiri ali mu kafukufuku ndi chitukuko padziko lonse lapansi.
