41 zidutswa 4 inchi graphite maziko MOCVD zida zida

Kufotokozera Kwachidule:

Chiyambi cha malonda ndi ntchito: Anayika zidutswa 41 za gawo lapansi la maola 4, zomwe zimagwiritsidwa ntchito kukulitsa LED yokhala ndi filimu yobiriwira yobiriwira ya epitaxial

Malo a chipangizocho: mu chipinda chochitiramo, pokhudzana ndi mtanda

Zogulitsa zazikulu zakumunsi: tchipisi ta LED

Msika waukulu wotsiriza: LED


Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Kufotokozera

Kampani yathu imaperekaKupaka kwa SiCntchito njira CVD pamwamba graphite, zoumba ndi zipangizo zina, kuti mpweya wapadera munali mpweya ndi pakachitsulo anachita pa kutentha kupeza mkulu chiyero SiC mamolekyu, mamolekyu waikamo pamwamba pa zinthu TACHIMATA, kupangaChitetezo cha SiC.

41 zidutswa 4 inchi graphite maziko MOCVD zida zida

Main Features

1. Kutentha kwakukulu kwa okosijeni kukana:
kukana kwa okosijeni kumakhalabe kwabwino kwambiri pamene kutentha kumakhala kokwera mpaka 1600 ℃.
2. Chiyero chachikulu: chopangidwa ndi kuyika kwa nthunzi wamankhwala pansi pa kutentha kwambiri kwa chlorination.
3. Kukana kukokoloka kwa nthaka: kuuma kwakukulu, pamwamba, tinthu tating'onoting'ono.
4. Kukana kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.

 

Zofunika Kwambiri za CVD-SIC Coating

SiC-CVD Properties
Kapangidwe ka Crystal FCC β gawo
Kuchulukana g/cm³ 3.21
Kuuma Vickers kuuma 2500
Ukulu wa Mbewu μm 2-10
Chemical Purity % 99.99995
Kutentha Mphamvu J·kg-1 ·K-1 640
Kutentha kwa Sublimation 2700
Felexural Mphamvu MPa (RT 4-point) 415
Young's Modulus Gpa (4pt bend, 1300 ℃) 430
Kukula kwa Thermal (CTE) 10-6K-1 4.5
Thermal conductivity (W/mK) 300
Semicera Ntchito
Semicera ntchito 2
Makina opangira zida
CNN processing, kuyeretsa mankhwala, CVD zokutira
Nyumba ya Semicera Ware
Utumiki wathu

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