4-inch SiC Substrate N-mtundu

4 Inchi SiC Gawo la N-mtundu wa Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

Semicera imapereka mitundu yosiyanasiyana ya 4H-8H SiC wafers. Kwa zaka zambiri, takhala tikupanga ndi kugulitsa zinthu ku semiconductor ndi mafakitale a photovoltaic. Zogulitsa zathu zazikulu ndi: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boat (PV & Semiconductor), silicon carbide ng'anjo yamachubu, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide matabwa, komanso CVD SiC zokutira Zovala za TaC. Kuphimba misika yambiri yaku Europe ndi America. Tikuyembekezera kukhala bwenzi lanu kwa nthawi yayitali ku China.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Silicon carbide (SiC) single crystal chuma ali ndi gulu lalikulu kusiyana m'lifupi (~ Si 3 nthawi), mkulu matenthedwe madutsidwe (~Si 3.3 nthawi kapena GaAs 10 nthawi), mkulu ma elekitironi machulukitsidwe mlingo kusamuka (~Si 2.5 nthawi), mkulu kuwonongeka magetsi munda (~ Si 10 nthawi kapena GaAs 5 nthawi) ndi zina zabwino kwambiri.

Mphamvu za Semicera zimatha kupereka makasitomala apamwamba kwambiri (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; Komanso, tikhoza kupereka makasitomala ndi homogeneous ndi heterogeneous pakachitsulo carbide epitaxial mapepala; Tikhozanso kusintha pepala la epitaxial malinga ndi zosowa zenizeni za makasitomala, ndipo palibe chiwerengero chochepa cha dongosolo.

Zinthu	Kupanga	Kafukufuku	Dummy
Crystal Parameters
Polytype	4H
Kulakwitsa koyang'ana pamwamba	<11-20>4±0.15°
Magetsi Parameters
Dopant	n-mtundu wa Nayitrogeni
Kukaniza	0.015-0.025ohm · masentimita
Mechanical Parameters
Diameter	99.5-100mm
Makulidwe	350±25 μm
Choyambira chapansi pamayendedwe	[1-100] ± 5°
Kutalika kosalala koyambirira	32.5 ± 1.5mm
Sekondale lathyathyathya malo	90 ° CW kuchokera ku lathyathyathya yoyamba ± 5 °. silicon pamwamba
Sekondale lathyathyathya kutalika	18 ± 1.5mm
TTV	≤5 μm	≤10 μm	≤20 μm
LTV	≤2 μm(5mm*5mm)	≤5 μm(5mm*5mm)	NA
Kugwada	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤20 μm	≤45 μm	≤50 μm
Front(Si-face) roughness(AFM)	Ra≤0.2nm (5μm*5μm)
Kapangidwe
Kuchuluka kwa Micropipe	≤1 gawo/cm2	≤5 pa/cm2	≤10 pa/cm2
Zitsulo zonyansa	≤5E10 maatomu/cm2		NA
BPD	≤1500 ea/cm2	≤3000 ea/cm2	NA
TSD	≤500 pa/cm2	≤1000 E/cm2	NA
Front Quality
Patsogolo	Si
Kumaliza pamwamba	Si-nkhope CMP
Tinthu ting'onoting'ono	≤60ea/wafer (kukula ≥0.3μm)	NA
Zokanda	≤2ea/mm. Kutalika kwake ≤Diameter	Kutalika kokwanira≤2 * Diameter	NA
Peel/maenje/madontho/mikwingwirima/ ming'alu/kuipitsidwa	Palibe		NA
M'mphepete tchipisi / indents / fracture / hex mbale	Palibe		NA
Magawo a polytype	Palibe	Malo owonjezera≤20%	Malo owonjezera ≤30%
Chizindikiro cha laser chakutsogolo	Palibe
Back Quality
Kumbuyo komaliza	C-nkhope CMP
Zokanda	≤5ea/mm,Cumulative kutalika≤2*Diameter	NA
Zowonongeka zam'mbuyo (zolowera m'mphepete / ma indents)	Palibe
Msana roughness	Ra≤0.2nm (5μm*5μm)
Chizindikiro cha laser kumbuyo	1 mm (kuchokera m'mphepete)
M'mphepete
M'mphepete	Chamfer
Kupaka
Kupaka	Chikwama chamkati chimadzazidwa ndi nayitrogeni ndipo thumba lakunja limapukutidwa. Multi-wafer cassette, epi-ready.
*Zindikirani: "NA" zikutanthauza kuti palibe pempho Zinthu zomwe sizinatchulidwe zingatanthauze SEMI-STD.