Semicera's 4 Inch N-type SiC Substrates amapangidwa kuti akwaniritse miyezo yeniyeni yamakampani opangira semiconductor. Magawo awa amapereka maziko apamwamba kwambiri amitundu yosiyanasiyana yamagetsi, opereka ma conductivity apadera komanso zinthu zotentha.
Ma doping amtundu wa N a magawo a SiC awa amakulitsa mphamvu zawo zamagetsi, kuwapangitsa kukhala oyenera kugwiritsa ntchito mphamvu zamphamvu komanso zothamanga kwambiri. Katunduyu amalola kuti zida monga ma diode, ma transistors, ndi amplifiers zitheke, komwe kuchepetsa kutaya mphamvu ndikofunikira.
Semicera imagwiritsa ntchito njira zopangira zamakono kuti zitsimikizire kuti gawo lililonse likuwonetsa mawonekedwe apamwamba komanso ofanana. Kulondola uku ndikofunika kwambiri pakugwiritsa ntchito zamagetsi zamagetsi, zida za microwave, ndi matekinoloje ena omwe amafunikira magwiridwe antchito odalirika pamikhalidwe yovuta kwambiri.
Kuphatikizira magawo a Semicera a N-mtundu wa SiC pamzere wanu wopanga kumatanthauza kupindula ndi zinthu zomwe zimapereka kutentha kwapamwamba komanso kukhazikika kwamagetsi. Magawo awa ndi abwino kupanga zida zomwe zimafunikira kulimba komanso kuchita bwino, monga makina osinthira mphamvu ndi ma amplifiers a RF.
Posankha Semicera's 4 Inch N-type SiC Substrates, mukugulitsa zinthu zomwe zimaphatikiza sayansi yaukadaulo ndi luso laukadaulo. Semicera ikupitirizabe kutsogolera makampaniwa popereka mayankho omwe amathandizira chitukuko cha matekinoloje apamwamba a semiconductor, kuonetsetsa kuti ntchito yabwino ndi yodalirika.
| Zinthu | Kupanga | Kafukufuku | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kulakwitsa koyang'ana pamwamba | <11-20>4±0.15° | ||
| Magetsi Parameters | |||
| Dopant | n-mtundu wa Nayitrogeni | ||
| Kukaniza | 0.015-0.025ohm · masentimita | ||
| Mechanical Parameters | |||
| Diameter | 150.0 ± 0.2mm | ||
| Makulidwe | 350±25 μm | ||
| Choyambira chapansi pamayendedwe | [1-100] ± 5° | ||
| Kutalika kosalala koyambirira | 47.5 ± 1.5mm | ||
| Sekondale flat | Palibe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kugwada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Kapangidwe | |||
| Kuchuluka kwa Micropipe | <1 pa/cm2 | <10 pa/cm2 | <15 pa/cm2 |
| Zitsulo zonyansa | ≤5E10 maatomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 pa/cm2 | ≤1000 ea/cm2 | NA |
| Front Quality | |||
| Patsogolo | Si | ||
| Kumaliza pamwamba | Si-nkhope CMP | ||
| Tinthu ting'onoting'ono | ≤60ea/wafer (kukula ≥0.3μm) | NA | |
| Zikanda | ≤5ea/mm. Kutalika kwake ≤Diameter | Kutalika kokwanira≤2 * Diameter | NA |
| Peel/maenje/madontho/mikwingwirima/ ming'alu/kuipitsidwa | Palibe | NA | |
| M'mphepete tchipisi / indents / fracture / hex mbale | Palibe | ||
| Zigawo za polytype | Palibe | Malo owonjezera≤20% | Malo owonjezera ≤30% |
| Chizindikiro cha laser chakutsogolo | Palibe | ||
| Back Quality | |||
| Kumbuyo komaliza | C-nkhope CMP | ||
| Zikanda | ≤5ea/mm,Cumulative kutalika≤2*Diameter | NA | |
| Zowonongeka zam'mbuyo (zolowera m'mphepete / ma indents) | Palibe | ||
| Msana roughness | Ra≤0.2nm (5μm*5μm) | ||
| Chizindikiro cha laser kumbuyo | 1 mm (kuchokera m'mphepete) | ||
| M'mphepete | |||
| M'mphepete | Chamfer | ||
| Kupaka | |||
| Kupaka | Epi-okonzeka ndi zoyika vacuum Kupaka makaseti amitundu yambiri | ||
| *Zindikirani: "NA" zikutanthauza kuti palibe pempho Zinthu zomwe sizinatchulidwe zingatanthauze SEMI-STD. | |||
