Semiceramonyadira akuyambitsa zake4" Gallium Oxide Substrates, chinthu chopanda pake chomwe chinapangidwa kuti chikwaniritse zofunikira zomwe zikukula za zida zogwira ntchito kwambiri za semiconductor. Gallium Oxide (Ga2O3) ma substrates amapereka bandgap yotalikirapo kwambiri, yomwe imawapangitsa kukhala abwino pamagetsi am'badwo wotsatira, ma UV optoelectronics, ndi zida zama frequency apamwamba.
Zofunika Kwambiri:
• Ultra-Wide Bandgap: Ndi4" Gallium Oxide Substrateskudzitamandira ndi bandgap pafupifupi 4.8 eV, kulola kwapadera voteji ndi kutentha kulolerana, kwambiri kuposa zinthu zachikhalidwe semiconductor zipangizo monga silikoni.
•High Breakdown Voltage: Magawo ang'onoang'onowa amathandizira kuti zida zizigwira ntchito pamagetsi okwera kwambiri ndi mphamvu, zomwe zimapangitsa kuti zikhale zabwino kwambiri pakugwiritsa ntchito mphamvu zamagetsi zamagetsi zamagetsi.
•Superior Thermal Stability: Magawo a Gallium Oxide amapereka matenthedwe abwino kwambiri, kuwonetsetsa kuti magwiridwe antchito akhazikika pamikhalidwe yovuta kwambiri, yoyenera kugwiritsidwa ntchito m'malo ovuta.
•Ubwino Wazinthu Zapamwamba: Ndi kachulukidwe kakang'ono kachilema komanso mtundu wapamwamba wa kristalo, magawowa amatsimikizira kugwira ntchito kodalirika komanso kosasintha, kumapangitsa kuti zida zanu zikhale zolimba komanso zolimba.
•Zosiyanasiyana Application: Yoyenera kugwiritsa ntchito mitundu yosiyanasiyana, kuphatikiza ma transistors amagetsi, ma Schottky diode, ndi zida za UV-C za LED, zomwe zimathandizira kuti pakhale zopanga zatsopano m'magawo onse amphamvu ndi optoelectronic.
Onani tsogolo laukadaulo wa semiconductor ndi Semicera's4" Gallium Oxide Substrates. Magawo athu adapangidwa kuti azithandizira mapulogalamu apamwamba kwambiri, kupereka kudalirika komanso kuchita bwino komwe kumafunikira pazida zamakono zamakono. Khulupirirani Semicera pazabwino komanso zatsopano mu zida zanu za semiconductor.
| Zinthu | Kupanga | Kafukufuku | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kulakwitsa koyang'ana pamwamba | <11-20>4±0.15° | ||
| Magetsi Parameters | |||
| Dopant | n-mtundu wa Nayitrogeni | ||
| Kukaniza | 0.015-0.025ohm · masentimita | ||
| Mechanical Parameters | |||
| Diameter | 150.0 ± 0.2mm | ||
| Makulidwe | 350±25 μm | ||
| Choyambira chapansi pamayendedwe | [1-100] ± 5° | ||
| Kutalika kosalala koyambirira | 47.5 ± 1.5mm | ||
| Sekondale flat | Palibe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kugwada | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Kapangidwe | |||
| Kuchuluka kwa Micropipe | <1 pa/cm2 | <10 pa/cm2 | <15 pa/cm2 |
| Zitsulo zonyansa | ≤5E10 maatomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 pa/cm2 | ≤1000 ea/cm2 | NA |
| Front Quality | |||
| Patsogolo | Si | ||
| Kumaliza pamwamba | Si-nkhope CMP | ||
| Tinthu ting'onoting'ono | ≤60ea/wafer (kukula ≥0.3μm) | NA | |
| Zikanda | ≤5ea/mm. Kutalika kwake ≤Diameter | Kutalika kokwanira≤2 * Diameter | NA |
| Peel/maenje/madontho/mikwingwirima/ ming'alu/kuipitsidwa | Palibe | NA | |
| M'mphepete tchipisi / indents / fracture / hex mbale | Palibe | ||
| Zigawo za polytype | Palibe | Malo owonjezera≤20% | Malo owonjezera ≤30% |
| Chizindikiro cha laser chakutsogolo | Palibe | ||
| Back Quality | |||
| Kumbuyo komaliza | C-nkhope CMP | ||
| Zikanda | ≤5ea/mm,Cumulative kutalika≤2*Diameter | NA | |
| Zowonongeka zam'mbuyo (zolowera m'mphepete / ma indents) | Palibe | ||
| Msana roughness | Ra≤0.2nm (5μm*5μm) | ||
| Chizindikiro cha laser kumbuyo | 1 mm (kuchokera m'mphepete) | ||
| M'mphepete | |||
| M'mphepete | Chamfer | ||
| Kupaka | |||
| Kupaka | Epi-okonzeka ndi zoyika vacuum Kupaka makaseti amitundu yambiri | ||
| *Zindikirani: "NA" zikutanthauza kuti palibe pempho Zinthu zomwe sizinatchulidwe zingatanthauze SEMI-STD. | |||
