2 ~ 6 inchi 4 ° off-angle P-mtundu 4H-SiC gawo lapansi

2 ~ 6 inchi 4° mbali ya P-mtundu 4H-SiC gawo lapansi Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

4 ° mbali ya P-mtundu wa 4H-SiC gawo lapansi ndi chinthu china cha semiconductor, pomwe "4 ° off-angle" imatanthawuza mbali ya kristalo ya chophika kukhala madigiri 4, ndipo "P-mtundu" imatanthauza mtundu wa conductivity wa semiconductor. Nkhaniyi ili ndi ntchito zofunika kwambiri pamakampani opanga ma semiconductor, makamaka pankhani zamagetsi zamagetsi ndi zamagetsi zamagetsi zamagetsi.

Titumizireni imelo

Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Magawo a Semicera a 2 ~ 6 inch 4° off-angle P-type 4H-SiC amapangidwa kuti akwaniritse zosowa zamphamvu zogwira ntchito kwambiri komanso opanga zida za RF. 4 ° off-angle orientation imawonetsetsa kukula kwa epitaxial, kupangitsa gawo lapansili kukhala maziko abwino a zida zingapo zama semiconductor, kuphatikiza ma MOSFET, IGBT, ndi ma diode.

Gawo ili la 2 ~ 6 inchi 4 ° off-angle P-mtundu wa 4H-SiC lili ndi zinthu zabwino kwambiri, kuphatikiza matenthedwe apamwamba, magwiridwe antchito amagetsi, komanso kukhazikika kwamakina. Kuwongolera kwa mbali kumathandizira kuchepetsa kachulukidwe ka micropipe ndikulimbikitsa zigawo zosalala za epitaxial, zomwe ndizofunikira kwambiri kuti zitheke bwino komanso kudalirika kwa chipangizo chomaliza cha semiconductor.

Semicera's 2 ~ 6 inchi 4 ° off-angle P-type 4H-SiC magawo akupezeka mumitundu yosiyanasiyana, kuyambira mainchesi 2 mpaka 6 mainchesi, kuti akwaniritse zofunikira zopanga zosiyanasiyana. Magawo athu amapangidwa ndendende kuti apereke milingo yofananira ya doping komanso mawonekedwe apamwamba kwambiri, kuwonetsetsa kuti chiwombankhanga chilichonse chikukwaniritsa zofunikira pamagetsi apamwamba kwambiri.

Kudzipereka kwa Semicera pazatsopano ndi zabwino zimatsimikizira kuti magawo athu a 2 ~ 6 inchi 4 ° off-angle P-mtundu wa 4H-SiC amapereka ntchito zokhazikika pazantchito zambiri kuchokera kumagetsi amagetsi kupita ku zida zapamwamba kwambiri. Izi zimapereka yankho lodalirika kwa m'badwo wotsatira wamagetsi opangira mphamvu, ochita bwino kwambiri, akuthandizira kupita patsogolo kwaukadaulo m'mafakitale monga magalimoto, matelefoni, ndi mphamvu zongowonjezwdwa.

Miyezo yokhudzana ndi kukula

Kukula	2-inchi	4-inchi
Diameter	50.8 mm± 0.38 mm	100.0 mm+0/-0.5 mm
Surface Orental	4 ° kulowera <11-20> ± 0.5 °	4 ° kulowera <11-20> ± 0.5 °
Utali Woyambira Wathyathyathya	16.0 mm± 1.5mm	32.5mm ± 2mm
Kutalika kwa Sekondale	8.0 mm ± 1.5mm	18.0 mm ± 2 mm
Chiyambi cha Flat Orientation	Parallelto <11-20> ± 5.0 °	Parallelto<11-20>±5.0c
Sekondale Flat Orientation	90 ° CW kuchokera ku pulayimale ± 5.0 °, silicon yayang'ana m'mwamba	90 ° CW kuchokera ku pulayimale ± 5.0 °, silicon yayang'ana m'mwamba
Pamwamba Pamwamba	C-Nkhope: Kuwala Polish, Si-Nkhope: CMP	C-Nkhope:OpticalPolish, Si-Nkhope: CMP
Wafer Edge	Beveling	Beveling
Kukalipa Pamwamba	Si-Face Ra <0.2 nm	Si-Face Ra <0.2nm
Makulidwe	350.0±25.0um	350.0±25.0um
Polytype	4H	4H
Doping	p-mtundu	p-mtundu

Miyezo yokhudzana ndi kukula

Kukula	6-inchi
Diameter	150.0 mm+0/-0.2 mm
Kuzungulira Pamwamba	4 ° kulowera <11-20> ± 0.5 °
Utali Woyambira Wathyathyathya	47.5 mm ± 1.5mm
Kutalika kwa Sekondale	Palibe
Chiyambi cha Flat Orientation	Kufanana ndi <11-20> ± 5.0 °
SekondaleFlat Orientation	90 ° CW kuchokera ku pulayimale ± 5.0 °, silicon ikuyang'ana m'mwamba
Pamwamba Pamwamba	C-Nkhope: Kuwala Polish, Si-Nkhope: CMP
Wafer Edge	Beveling
Kukalipa Pamwamba	Si-Face Ra <0.2 nm
Makulidwe	350.0±25.0μm
Polytype	4H
Doping	p-mtundu