Silicon nitride yomangidwa ndi silicon carbide
Si3N4 yomangidwa ndi SiC ceramic refractory material, imasakanizidwa ndi ufa wapamwamba wa SIC ndi Silicon ufa, pambuyo poponyera njira, zomwe zimapangidwira pansi pa 1400 ~ 1500 ° C.Panthawi ya sintering, kudzaza nayitrogeni yapamwamba kwambiri mu ng'anjo, ndiye silicon idzachitapo ndi nayitrogeni ndikupanga Si3N4, Choncho Si3N4 yomangidwa ndi SiC zakuthupi zimapangidwa ndi silicon nitride (23%) ndi silicon carbide (75%) monga zopangira zazikulu. , kusakaniza ndi zinthu organic, ndi zoumbidwa ndi osakaniza, extrusion kapena kuthira, ndiye anapanga pambuyo kuyanika ndi nitrogenization.
Mbali ndi ubwino:
1.High kutentha kulolerana
2.High matenthedwe conductivity ndi kukaniza mantha
3.Mkulu wamakina mphamvu ndi kukana abrasion
4.Kupambana kwamphamvu kwamphamvu komanso kukana dzimbiri
Timapereka zida za ceramic zamtundu wapamwamba kwambiri komanso zolondola kwambiri za NSiC zomwe zimayendetsedwa ndi
1.Slip casting
2.Kutulutsa
3.Uni Axial Pressing
4.Isostatic Pressing
Material Datasheet
>Kupanga Kwamankhwala | Sic | 75% |
Si3N4 | ≥23% | |
Free Si | 0% | |
Kuchulukana (g/cm3) | 2.70~2.80 | |
Kuwoneka kwa porosity (%) | 12~15 | |
Bend mphamvu pa 20 ℃(MPa) | 180~190 | |
Bend mphamvu pa 1200 ℃(MPa) | 207 | |
Bend mphamvu pa 1350 ℃(MPa) | 210 | |
Mphamvu zopondereza pa 20 ℃(MPa) | 580 | |
Thermal conductivity pa 1200 ℃ (w/mk) | 19.6 | |
Kukula kowonjezera kwamafuta pa1200 ℃(x 10-6/C) | 4.70 | |
Thermal shock resistance | Zabwino kwambiri | |
Max.kutentha (℃) | 1600 |